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Bulk-Si와 PD-SOI에 형성된 SiGe p-MOSFET의 전기적 특성의 비교

최상식, 최아람, 김재연, 양전욱, 한태현, 조덕호, 황용우, 심규환

Comparison of Electrical Characteristics of SiGe pMOSFETs Formed on Bulk-Si and PD-SOI

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J Korean Inst Electr Electron Mater Eng 2007;20(6):491-495.
Published online: June 1, 2007
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Comparison of Electrical Characteristics of SiGe pMOSFETs Formed on Bulk-Si and PD-SOI
J Korean Inst Electr Electron Mater Eng. 2007;20(6):491-495.   Published online June 1, 2007
DOI: https://doi.org/10.4313/JKEM.2007.20.6.491
Download Citation

Download a citation file in RIS format that can be imported by all major citation management software, including EndNote, ProCite, RefWorks, and Reference Manager.
Format:
Include:
Comparison of Electrical Characteristics of SiGe pMOSFETs Formed on Bulk-Si and PD-SOI
J Korean Inst Electr Electron Mater Eng. 2007;20(6):491-495.   Published online June 1, 2007
DOI: https://doi.org/10.4313/JKEM.2007.20.6.491
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