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SF6, C4F8, O2 가스 변화에 따른 실리콘 식각율과 식각 형태 개선

권순일, 양계준, 송우창, 임동건

Improvement of Etch Rate and Profile by SF6, C4F8 and O2 Gas Modulation

Soon Il Kwon, Kea Joon Yang, Woo Chang Song, Dong Gun Lim
J Korean Inst Electr Electron Mater Eng 2008;21(4):305-310.
Published online: April 1, 2008
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Improvement of Etch Rate and Profile by SF6, C4F8 and O2 Gas Modulation
J Korean Inst Electr Electron Mater Eng. 2008;21(4):305-310.   Published online April 1, 2008
DOI: https://doi.org/10.4313/JKEM.2008.21.4.305
Download Citation

Download a citation file in RIS format that can be imported by all major citation management software, including EndNote, ProCite, RefWorks, and Reference Manager.
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Include:
Improvement of Etch Rate and Profile by SF6, C4F8 and O2 Gas Modulation
J Korean Inst Electr Electron Mater Eng. 2008;21(4):305-310.   Published online April 1, 2008
DOI: https://doi.org/10.4313/JKEM.2008.21.4.305
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