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SiO2/Si3N4 터널 절연막의 적층구조에 따른 비휘발성 메모리 소자의 특성 고찰

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Study of Nonvolatile Memory Device with SiO2/Si3N4 Stacked Tunneling Oxide

Won Ju Cho
J Electr Electron Mater 2009;22(1):17-21.
Published online: January 1, 2009
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Study of Nonvolatile Memory Device with SiO2/Si3N4 Stacked Tunneling Oxide
J Electr Electron Mater. 2009;22(1):17-21.   Published online January 1, 2009
Download Citation

Download a citation file in RIS format that can be imported by all major citation management software, including EndNote, ProCite, RefWorks, and Reference Manager.

Format:
Include:
Study of Nonvolatile Memory Device with SiO2/Si3N4 Stacked Tunneling Oxide
J Electr Electron Mater. 2009;22(1):17-21.   Published online January 1, 2009
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