Skip to main navigation Skip to main content
  • KIEEME

J Electr Electron Mater : Journal of Electrical and Electronic Materials

OPEN ACCESS
Search
Advanced Search
ABOUT
BROWSE ARTICLES
EDITORIAL POLICIES
FOR CONTRIBUTORS

Articles

Page Path

산화알루미늄 박막의 두께 및 열처리 온도에 따른 Al2O3/Gan MIS 구조의 전기적 특성 변화

곽노원, 이우석, 김가람, 김현준, 김광호

Change in Electrical Properties of Al2O3/Gan MIS Structures according to the Thickness of Al2O3 Thin Film and Annealing Temperature

No-Won Kwak, Woo Seok Lee, Ka Lam Kim, Hyun Jun Kim, Kwang Ho Kim
J Electr Electron Mater 2009;22(6):470-475.
Published online: June 1, 2009
  • 5 Views
  • 0 Download
  • 0 Crossref
  • 0 Scopus
prev next

Full Article

Download PDF Download PDF

Download Citation

Download a citation file in RIS format that can be imported by all major citation management software, including EndNote, ProCite, RefWorks, and Reference Manager.

Format:

Include:

Change in Electrical Properties of Al2O3/Gan MIS Structures according to the Thickness of Al2O3 Thin Film and Annealing Temperature
J Electr Electron Mater. 2009;22(6):470-475.   Published online June 1, 2009
Download Citation

Download a citation file in RIS format that can be imported by all major citation management software, including EndNote, ProCite, RefWorks, and Reference Manager.
Format:
Include:
Change in Electrical Properties of Al2O3/Gan MIS Structures according to the Thickness of Al2O3 Thin Film and Annealing Temperature
J Electr Electron Mater. 2009;22(6):470-475.   Published online June 1, 2009
Close

Related articles

ABOUT

BROWSE ARTICLES

EDITORIAL POLICIES

FOR CONTRIBUTORS

© The Korean Institute of Electrical and Electronic Materials Engineers.