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양자효과를 고려한 실리콘 나노선 트랜지스터의 채널 크기에 따른 전도 및 전하분포 특성 시뮬레이션

황민영, 최창용, 문경숙, 구상모

Simulation of Channel Dimension Dependent Conduction and Charge Distribution Characteristics of Silicon Nanowire Transistors using a Quantum Model

Min Young Hwang, Chang Yong Choi, Kyoung Sook Moon, Sang Mo Koo
J Electr Electron Mater 2009;22(9):728-731.
Published online: September 1, 2009
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Simulation of Channel Dimension Dependent Conduction and Charge Distribution Characteristics of Silicon Nanowire Transistors using a Quantum Model
J Electr Electron Mater. 2009;22(9):728-731.   Published online September 1, 2009
Download Citation

Download a citation file in RIS format that can be imported by all major citation management software, including EndNote, ProCite, RefWorks, and Reference Manager.

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Simulation of Channel Dimension Dependent Conduction and Charge Distribution Characteristics of Silicon Nanowire Transistors using a Quantum Model
J Electr Electron Mater. 2009;22(9):728-731.   Published online September 1, 2009
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