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FTS 장치를 이용한 가스 차단막용 SiOx 및 SiOxNy 박막의 공정특성

손진운, 박용진, 손선영, 김화민

Process Characteristics of SiOx and SiOxNy Films on a Gas Barrier Layer using Facing Target Sputtering (FTS) System

Jin Woon Son, Yong Jin Park, Sun Young Sohn, Hwa Min Kim
J Electr Electron Mater 2009;22(12):1028-1032.
Published online: December 1, 2009
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Process Characteristics of SiOx and SiOxNy Films on a Gas Barrier Layer using Facing Target Sputtering (FTS) System
J Electr Electron Mater. 2009;22(12):1028-1032.   Published online December 1, 2009
Download Citation

Download a citation file in RIS format that can be imported by all major citation management software, including EndNote, ProCite, RefWorks, and Reference Manager.
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Process Characteristics of SiOx and SiOxNy Films on a Gas Barrier Layer using Facing Target Sputtering (FTS) System
J Electr Electron Mater. 2009;22(12):1028-1032.   Published online December 1, 2009
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