The etching characteristics of ZnO and etch selectivities of ZnO to SiO2 in SF6/Ar plasma were investigated using Inductively-coupled-plasma (ICP). The maximum etch rates of ZnO were 6.5 nm/min at SF6(50%)/Ar(50%), Source power (700 W), Bias power (250 W), Working pressure(8 mTorr). The etch rate of ZnO showed a non-monotonic behavior with increasing from 0% to 50% Ar fraction in SF6/ Ar plasma. The plasma diagnostic were characterized using Optical Emission Spectroscopy (OES) analysis measurements.
