The TiO2/Si3N4/Ag/Si3N4/TiO2 multi layered structure was designed for the possible application of transparent electrodes in PDP (Plasma Display Panel). Multi layered film was deposited on a glass substrate at room temperature by DC/RF magnetron sputtering system and EMP (Essential Macleod Program) was adopted to optimize the optical characteristics of film. During the deposition process, the Ag layer in TiO2/Ag/TiO2 became heavily oxidized and the filter characteristic was degraded easily. In thus study, Si3N4 layer was used as a diffusion buffer layer between TiO2 and Ag. in order to prevent the oxidation of Ag layer in TiO2/Si3N4/Ag/Si3N4/TiO2 structure. It was confirmed that Si3N4 layer is one of candidate materials acting as diffusin barrier between TiO2/Ag/TiO2.
