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GAIVBE 기법 에 의한 저온 Al2O3 on Si 박막의 형성과 전기적 특성에 관한 연구

성만영, 김태익, 문병무, K.V.Rao, 박성희

A Study on the Electrical Characteristics and the Growth of Al2O3 Film on Si with Low Temperatures by GAIVBE Technique

Man Young Sung, Tae Ik Kim, Byoung Moo Mun, K . V . Rao, Sung Hee Park
J Electr Electron Mater 1995;8(3):306-315.
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A Study on the Electrical Characteristics and the Growth of Al2O3 Film on Si with Low Temperatures by GAIVBE Technique
J Electr Electron Mater. 1995;8(3):306-315.
Download Citation

Download a citation file in RIS format that can be imported by all major citation management software, including EndNote, ProCite, RefWorks, and Reference Manager.

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A Study on the Electrical Characteristics and the Growth of Al2O3 Film on Si with Low Temperatures by GAIVBE Technique
J Electr Electron Mater. 1995;8(3):306-315.
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