In this research, we prepared Ga doped zinc oxide(ZnO:Ga, GZO) targets each difference sintering temperature 700℃, 800℃, and doping rate 1 wt.%, 2 wt.%, 3 wt.%. The characteristics of thin film on glass substrates which deposited by facing target sputtering in pure Ar atmosphere are reported. Ga doped zinc oxide film is attracted material through low resistivity, high transmittance, etc. When prepared target powder`s structure was investigated by scanning electron microscope, densification and coarsening by driving force was observed. For each ZnO:Ga films with a Ga2O3 content of 3 wt.% at input power of 45 W, the lowest resistivity of 9.967×10(-4) Ω·cm (700℃) and 9.846×10(-4) Ω ·cm (800℃) was obtained. the carrier concentration and mobility were 4.09 × 10(20) cm-3(700℃), 4.12×10(20) cm-3(800℃) and 15.31 cm2/V·s(700℃), 12.51 cm2/V·s(800℃), respectively. And except 1 wt.% Ga doped ZnO thin film, average transmittance of these samples in the range 350-800 nm was over 80%.
