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J Electr Electron Mater : Journal of Electrical and Electronic Materials

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유기박막 트랜지스터에서 문턱전압 이동의 모델링 및 시뮬레이션

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Modeling and Simulation of Threshold Voltage Shift in Organic Thin-film Transistors

Tae Ho Jung
J Electr Electron Mater 2013;26(2):92-97.
Published online: February 1, 2013
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In this paper the author proposes a method of implementing a numerical model for threshold voltage (V_th) shift in organic thin-film transistors (QTFTs) into SPICE tools. V_th shift is first numerically modeled by dividing the shift into sequentially ordered groups. The model is then used to derive a simulations model which takes into simulation parameters and calculation complexity. Finally, the numerical and simulation models are implemented in AIM-SPICE. The SPICE simulation results agree well with the V_th shift obtained from an OTFT fabricated without any optimization. The proposed method is also used to implement the stretched-exponential time dependent V_th shift in AIM-SPICE and the results show the proposed method is applicable to various types of V_th shifts.

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Modeling and Simulation of Threshold Voltage Shift in Organic Thin-film Transistors
J Electr Electron Mater. 2013;26(2):92-97.   Published online February 1, 2013
Download Citation

Download a citation file in RIS format that can be imported by all major citation management software, including EndNote, ProCite, RefWorks, and Reference Manager.

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Modeling and Simulation of Threshold Voltage Shift in Organic Thin-film Transistors
J Electr Electron Mater. 2013;26(2):92-97.   Published online February 1, 2013
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