To study emission properties of white phosphorescent organic light emitting devices (PHOLEDs), we fabricated white PHOLEDs of ITO (150 nm) / NPB(30 nm) / TcTa(10 nm) / mCP(7.5 nm) / light-emitting layer(25 nm) / UGH3(5 nm) / Bphen(50 nm) / LiF(0.5nm) / Al(200 NM) structure. The total thickness of light-emitting layer with co-doping and blue-doping/ co-doping using a host-dopant system was 25 nm and the dopant of blue and red was FIrpic and Bt2Ir(acac) in UGH3 as host. respectively. The OLED characteristics were changed with position and thickness of doping layer and co-doping layer as light-emitting layer and the best performance seemed in structure of blue-doping(5 nm)/co-doping(20 nm) later. The white PHOLEDs showed the maximum current density of 34.5 mA /cm², maximum brightness of 5,731 cd/ m², maximum current efficiency of 34.8 cd/A, maximum power efficiency of 21.6lm/w, maximum quantum effiency of 15.6%, and a Commission International de L`Eclairage (CIE) coordinate of (0.367, 0.436) at 1,000 cd/m².
