The bipolar resistive switching characteristics of resistive random access memory (ReRAM) based on HfO2 thin films have been demonstrated by using Ag/HfO2/Pt structured ReRAM device. MIcrowave irradiation (MWI) treatment at low temperature was employed in device fabrication with HfO2thin films as a transition layer. Compared to the as-deposited Ag/HfO2/Pt device, highly improved uniformity characteristics of resistance values and operating voltages were obtained from the MWI treatment Ag/HfO2/Pt ReRAM device. In addition, a stable DC endurance (> 100 cycles) and a high data retention (> 104 sec) were achieved.
