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대용량 전력변환용 초접합 IGBT 개발에 관한 연구

정헌석, 강이구

The Develop of Super Junction IGBT for Using Super High Voltage

Hun Suk Chung, Ey Goo Kang
J Electr Electron Mater 2015;28(8):496-500.
Published online: August 1, 2015
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This paper was proposed the theoretical research and optimal design 3000V super junction NPT IGBT for using electrical automotive and power conversion. Because super junction IGBT was showed ultra low on resistance, it was structure that can improve the thermal characteristics of conventional NPT IGBT. The electrical characteristics of super junction NPT IGBT were 2.52 V of on state voltage drop, 4.33 V of threshold voltage and 2,846 V breakdown voltage. We did not obtaing 3,000 V breakdown voltage but we will obtain 3,000 V breakdown voltage through improving p pillar layer. If we are carried this research, This device will be used electrical automotive, power conversiton and high speed train.

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The Develop of Super Junction IGBT for Using Super High Voltage
J Electr Electron Mater. 2015;28(8):496-500.   Published online August 1, 2015
Download Citation

Download a citation file in RIS format that can be imported by all major citation management software, including EndNote, ProCite, RefWorks, and Reference Manager.

Format:
Include:
The Develop of Super Junction IGBT for Using Super High Voltage
J Electr Electron Mater. 2015;28(8):496-500.   Published online August 1, 2015
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