This research was designed 700 level power MOSFET for smart LED driver ICs package. And we analyzed electrical characteristics of the power MOSFET as like breakdown voltage, on-resistance and threshold voltage. Because this research is important optimal design for smart LED ICs package, we designed power MOSFET with design and process parameter. As a result of this research, we obtained 60㎛ N-drift layer depth, 791.29 V breakdown voltage, 0.248 Ω·cm2 on resistance and 3.495 V threshold voltage. We will use effectively this device for smart LED driver ICs package
