A high-performing photoelectric device was realized for the MoS2-embedded Si device. MoS2-coating was performed by an available large-scale sputtering method. The MoS2-layer coating on the p-Si spontaneously provides the rectifying current flow with a significant rectifying ratio of 617. Moreover, the highly optical transmittance of the MoS2-layer provides over 80% transmittance for broad wavelengths. The MoS2-embedded Si photodetector shows the sensitive photo-response for middle and long-wavelength photons due to the functional MoS2-layer, which resolves the conventional limit of Si for long wavelength detection. The functional design of MoS2-layer would provide a promising route for enhanced photoelectric devices, including photovoltaic cells and photodetectors.
