The designing approaches with consideration offabrication process technologies for high-frequency, high-powered, silicon-based static induction thyristors (SITH) are presented. The effects of doping concentration and thickness on the I-V characteristics and power performance of the devices are discussed. The dependence of SITH switching performances on material, geometric structure, and technological parameters isexamined by using two-dimensional simulations. Thickepitaxy technology is found to be one of the most critical steps in realizing the proposed structure and switching times, toff, of SITH, which may be reduced to below ~0.26 μs for the proposed 1,700 V SITH devicesafter optimization.
