In this paper, we discuss β-Ga2O3 thin films that have been grown on freestanding GaN (FS-GaN) using furnace oxidation. A GaN template was grown by horizontalhydride vapor phase epitaxy (HVPE), and FS-GaN was fabricated using the laser lift off (LLO) system. To obtain β-Ga2O3 thin film, FS-GaN was oxidized at 900~1,100℃. Surface and cross-section of prepared β-Ga2O3 thin films were observed by field emission scanning electron microscopy (FE-SEM). The single crystal FS-GaNs were changed to poly-crystal β-Ga2O3. The oxidized β-Ga2O3 thin film at 1,100℃ was peel off from FS-GaN. Next, oxidation of FS-GaNwas investigated for 0.5~12 hours with variation of the oxidation time. The thicknesses of β-Ga2O3 thin films were measured from 100 nm to 1,200 nm. Moreover, the 2-theta XRD result indicated that (-201), (-402), and (-603) peaks were confirmed. The intensity of peaks was increased with increased oxidation time. The β-Ga2O3 thin film was generated to oxidize FS-GaN.
