We prepared SnSx thin films on both soda-lime glass (SLG) and molybdenum(Mo)/SLG substrates by a two-step process using a Sn precursor followed by sulfur reaction in rapid thermal annealing (RTA) at different sulfurization temperatures (Ts = 200℃, 230℃, 250℃, and 300℃) and annealing times (ts = 10 min and 30 min). The single SnS phase was dominant for 200℃≤Ts<250℃, while an additional phase of SnS2 was appeared at Ts≥250℃ alongside SnS. The SnS grains in all the samples showed strong growth along the preferred [040] direction. The band-gap energy (Eg) of the films was estimated to be 1.24 eV.
