Pure BiFeO3 (BFO) and codoped Bi0.9A0.1Fe0.975Zn0.025O3-δ (A=Eu, Dy) thin films were prepared on Pt(111)/ Ti/SiO2/Si(100) substrates by chemical solution deposition. The remnant polarizations (2Pr) of the Bi0.9Eu0.1Fe0.975Zn0.025O3-δ (BEFZO) and Bi0.9Dy0.1Fe0.975Zn0.025O3-δ (BDFZO) thin films were about 36 and 26 μC/cm2 at the maximum electric fields of 900 and 917 kV/cm, respectively, at 1 kHz. The codoped BEFZO and BDFZO thin films showed improved electrical properties, and leakage current densities of 3.68 and 1.21×10-6 A/cm2, respectively, which were three orders of magnitude lower than that of the pure BFO film, at 100 kV/cm.
