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마이크로웨이브 응용을 위한 솔-젤법으로 제작한 K(Ta0.6Nb0.4)O3 박막의 유전 특성

권민수, 이성갑, 김경민, 이삼행, 김영곤

Dielectric Properties of K(Ta0.6Nb0.4)O3 Thin Films Prepared by Sol-Gel Method for Microwave Applications

Min-su Kwon, Sung-gap Lee, Kyeong-min Kim, Sam-haeng Lee, Young-gon Kim
J Electr Electron Mater 2018;31(6):403-407.
Published online: September 1, 2018
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In this study, double layer KTN/STO thin films were fabricated on Pt/Ti/SiO2/Si substrate, their structural and electrical properties were measured according with the number of STO coatings, and their applicability to microwave materials was investigated. The average grain size was about 80~90 nm, the average thickness of the 6-coated KTN thin film was about 320 nm, and the average thickness of the STO thin film coated once was about 45~50 nm. The dielectric constant decreased with increasing frequency, and as the number of STO coatings increased, the rate of change of the dielectric constant with the applied electric field decreased. The tunability of the KTN thin film showed a maximum value of 19.8% at 3 V. The figure of merit of the KTN/1STO thin film was 9.8 at 3 V.

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Dielectric Properties of K(Ta0.6Nb0.4)O3 Thin Films Prepared by Sol-Gel Method for Microwave Applications
J Electr Electron Mater. 2018;31(6):403-407.   Published online September 1, 2018
Download Citation

Download a citation file in RIS format that can be imported by all major citation management software, including EndNote, ProCite, RefWorks, and Reference Manager.

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Dielectric Properties of K(Ta0.6Nb0.4)O3 Thin Films Prepared by Sol-Gel Method for Microwave Applications
J Electr Electron Mater. 2018;31(6):403-407.   Published online September 1, 2018
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