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Volume 21(10); October 2008

TLP Properties Evaluation of ESD Protection Device of GGNMOS Type for Conventional CMOS Process: Tae Il Lee, Hong Bae Kim; J Korean Inst Electr Electron Mater Eng 2008;21(10):875-880. Published online October 1, 2008; DOI: https://doi.org/10.4313/JKEM.2008.21.10.875

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Effect of Thickness on Electrical Properties of PVDF-TrFE(51/49) Copolymer: Joo Nam Kim, Ho Seung Jeon, Hui Seong Han, Jong Hyung Im, Byung Eun Park, Chul Ju Kim; J Korean Inst Electr Electron Mater Eng 2008;21(10):881-884. Published online October 1, 2008; DOI: https://doi.org/10.4313/JKEM.2008.21.10.881

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Fabrication of Multilayered Polyvinylidene Difluoride Films for Dielectric Capacitor, Sensing, and Energy Harvesting Performance
P. Elorika, Arpita Patra, Bibekananda Nayak, S. Jayasri, A. Sharmistha, Shahid Anwar
IEEE Sensors Journal.2024; 24(20): 33064. CrossRef
Influence of the processing method on the properties of a PVDF film
S. M. Lebedev, O. S. Gefle, S. N. Tkachenko
Russian Physics Journal.2011; 54(6): 679. CrossRef

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Simulated DC Charceristics of AlGaN HEMTs with Trench Shapped Source, Dracin Strucures: Kang Min Jung, Young Soo Lee, Su Jin Kim, Dong Ho Kim, Jae Moo Kim, Hong Goo Choi, Cheol Koo Hahn, Tae Geun Kim; J Korean Inst Electr Electron Mater Eng 2008;21(10):885-888. Published online October 1, 2008; DOI: https://doi.org/10.4313/JKEM.2008.21.10.885

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Anomaly and defects characterization by I-V and current deep level transient spectroscopy of Al0.25Ga0.75N/GaN/SiC high electron-mobility transistors
Salah Saadaoui, Mohamed Mongi Ben Salem, Malek Gassoumi, Hassen Maaref, Christophe Gaquière
Journal of Applied Physics.2012;[Epub] CrossRef

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A Study on the 1,700 V Rated NPT Trench 1GBT Analysis by PIN Diode-PNP Transistor Model: Jong Seok Lee, Sin Su Kyoung, Ey Goo Kang, Man Young Sung; J Korean Inst Electr Electron Mater Eng 2008;21(10):889-895. Published online October 1, 2008; DOI: https://doi.org/10.4313/JKEM.2008.21.10.889

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A Dielectric Constant Measurement Method of Unprepared Samples: Won Hui Lee; J Korean Inst Electr Electron Mater Eng 2008;21(10):896-900. Published online October 1, 2008; DOI: https://doi.org/10.4313/JKEM.2008.21.10.896

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Dielectric and Piezoelectric Characteristics of (Na,K)NbO3 Ceramics System According to Sintering Time: Do Hyung Kim, Ju Hyun Yoo, In Sung Kim, Sae Sung Song; J Korean Inst Electr Electron Mater Eng 2008;21(10):901-905. Published online October 1, 2008; DOI: https://doi.org/10.4313/JKEM.2008.21.10.901

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Piezoelectric and Dielectric Properties of Low Temperature Sintering (K0.5Na0.5)NbO3 Ceramics according to Sintering Aid Li2CO3: IL Ha Lee, Ju Hyun Yoo; J Korean Inst Electr Electron Mater Eng 2008;21(10):906-910. Published online October 1, 2008; DOI: https://doi.org/10.4313/JKEM.2008.21.10.906

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Textured Potassium Sodium Niobate Lead-Free Ceramics with High d33 and Qm for Meeting High-Power Applications
Dong Liu, Li-Feng Zhu, Ting Tang, Jin-Rui Li, Long Wang, Yi-Xuan Liu, Junjie Hao, Shidong Wang, Ke Wang
ACS Applied Materials & Interfaces.2024; 16(6): 7444. CrossRef

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The Fabrication and Characteristics of White Emission Using CCM on Flexible Substrate: Gi Ryoung Kim, Sung Il Ahn, Jeong Hun Kum, Heung Ryeol Lee, Tae Hong Yim, Seong Eui Lee; J Korean Inst Electr Electron Mater Eng 2008;21(10):911-915. Published online October 1, 2008; DOI: https://doi.org/10.4313/JKEM.2008.21.10.911

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A Study on Discharge Characteristics of the PDP Packaged with In-situ Vacuum Sealing with the MgO Protective Layer Deposited by Optimal Evaporation Rate: Zhao Hui Li, Eou Sik Cho, Sang Jik Kwon; J Korean Inst Electr Electron Mater Eng 2008;21(10):916-922. Published online October 1, 2008; DOI: https://doi.org/10.4313/JKEM.2008.21.10.916

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Physical Properties of ITO/PVDF as a Function of Oxygen Partial Pressure: Sang Yub Lee, Ji Hwan Kim, Dong Hee Park, Dong Jin Byun, Won Kook Choi; J Korean Inst Electr Electron Mater Eng 2008;21(10):923-929. Published online October 1, 2008; DOI: https://doi.org/10.4313/JKEM.2008.21.10.923

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Electrical Properties of CuPc Field-effect Transistor with Different Electrodes: Ho Shik Lee, Yong Pil Park, Min Woo Cheon; J Korean Inst Electr Electron Mater Eng 2008;21(10):930-933. Published online October 1, 2008; DOI: https://doi.org/10.4313/JKEM.2008.21.10.930

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Surface Potential Properties of CuPc/Au Interface with Varying Temperature: Ho Shik Lee, Yong Pil Park; J Korean Inst Electr Electron Mater Eng 2008;21(10):934-937. Published online October 1, 2008; DOI: https://doi.org/10.4313/JKEM.2008.21.10.934

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Electrical and Optical Properties of Semitransparent Metal Electrodes for Top-emission Organic Light-emitting Diodes: Eun Chul Shin, Hui Chul An, Tae Wan Kim; J Korean Inst Electr Electron Mater Eng 2008;21(10):938-942. Published online October 1, 2008; DOI: https://doi.org/10.4313/JKEM.2008.21.10.938

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Fabrication of Superconducting Transition Edge Sensors based on Ti/Au Bilayer Formation: Young Hwa Lee, Yong Hamb Kim; J Korean Inst Electr Electron Mater Eng 2008;21(10):943-949. Published online October 1, 2008; DOI: https://doi.org/10.4313/JKEM.2008.21.10.943

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Effect of Transport Current Properties on Connecting of YBCO Coated Conductor having Stabilizer Layer and BSCCO Tape: Ho Ik Du, Min Ju Kim, Chung Ryul Park, Seung Gyu Doo, Yong Jin Kim, Byoung Sung Han; J Korean Inst Electr Electron Mater Eng 2008;21(10):950-953. Published online October 1, 2008; DOI: https://doi.org/10.4313/JKEM.2008.21.10.950

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The Effects of Elastic Modulus Coefficient and Linear Expansion Coefficient of Overhead Conductor on Sag Bahavior: Byung Geol Kim, Shang Shu Kim, Yun Chan Wang; J Korean Inst Electr Electron Mater Eng 2008;21(10):954-960. Published online October 1, 2008; DOI: https://doi.org/10.4313/JKEM.2008.21.10.954

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