Power MOSFET operate voltage-driven devices, design to control the large power switching device for power supply, converter, motor control, etc. We have optimal designed planar and trench gate power MOSFET for high breakdown voltage and low on resistance. When we have designed 6,580 um ×5,680 um of chip size and 20 A current, on resistance of trench gate power MOSFET was low than planar gate power MOSFET. The on state voltage of trench gate power MOSFET was improved from 4.35 V to 3.7 V. At the same time, we have designed unified field limit ring for trench gate power MOFET. It is Junction Termination Edge type. As a result, we have obtained chip shrink effect and low on resistance because conventional field limit ring was convert to unify.

Power MOSFET operate voltage-driven devices, design to control the large power switching device for power supply, converter, motor control, etc. We have analyzed trench process, field limit ring process for fabrication of unified trench gate power MOSFET. And we have analyzed electrical characteristics of fabricated unified trench gate power MOSFET. The optimal trench process was based on SF6. After we carried out SEM measurement, we obtained superior trench gate and field limit ring process. And we compared electrical characteristics of planar and trench gate unified power MOSFET after completing device fabrication. As a result, the both of them was obtained 500 V breakdown voltage. However trench gate unified power MOSFET was shown improved Vth and on state voltage drop characteristics than planar gate unified power MOSFET.

In order to develop a high voltage insulation material, spherical silicas with two average particle sizes of 5 μm and 20 μm were mixed in different mixing ratios (1:0, 0.7:0.3, 0.5:0.5, 0.3:0.7, 0:1) and their total filling content was fixed at 65 wt%. In order to observe the dispersion of the spherical silicas and the interfacial morphology between silica and epoxy matrix, field emission scanning electron microscope (FE-SEM) was used. The electrical insulation breakdown strength was estimated in sphere-plate electrodes with different insulation thicknesses of 1, 2, and 3 mm. Electrical insulation breakdown strength decreased with increasing mixing ratio of 5/20 μm and the thickness dependence of the breakdown strength was also observed. The tensile strength of the neat epoxy was 82.8 MPa as average value and its increased with decreasing particles size and that of epoxy/silica (2 μm) was 107 MPa, which was 130.8% higher value.

YBCO thin films on SiO2/Si substrate were fabricated by spin-coaing of an alkoxide-derived precursor and heat treatment. The structural and electrical properties of the YBCO films were investigated as functions of annealing temperature at 600∼800℃. Although YBCO single phase was not synthesized, dense films of YBCO matrix phase and minor second phases have been successfully fabricated at the annealing temperatures of 650∼800℃. Thickness and temperature coefficient of resistance (TCR) of YBCO thin films with annealing temperature of 750℃ were 0.31 μm and -2.92%/℃,respectively.

In this study, the influence of electrochemical properties by mixing Tetrabutylammonium hydroxide (TBAOH) and ammonium hydroxide (NH4OH) electrode on the dssc. The titanias were prepared using a sol-gel method by mixing Tetrabutylammonium hydroxide and Ammonium hydroxide. The TiO2nanopowder prepared by sol-gel methode, and to improve the distributed properties of TiO2 nanopowder,the TBAOH and NH4OH was added. The I-V values of cells show that the Tetrabutylammonium has 6.51%efficiency.

In this study, we fabricated anodic aluminum oxide (AAO) membrane by two step anodizing process for pH detection. The structural properties were observed by X-ray diffraction (XRD) and field emission scanning electron microscope (FE-SEM). Electrochemical measurements of the pH sensor have been performed in capacitance-voltage (C-V) and drift rates. The characterization of AAO membrane exhibited high sensitivity (99.1 mV/pH) at second anodizing time of 4 min.이 논문에 참고문헌이 0건 있습니다.

Performance of organic light-emitting diodes incorporating microlens array was simulated using a Light Tools software. Use of microlens array can help the light to escape out of the device. We simulated a reference device that is consisted of reflection layer, emissive layer, and flat transparent substrate. And in this reference device, outcoupled efficiency of 22% was obtained. Several shapes of microlens were applied such as hemisphere, trapezoid, cone, and rectangular parallelepiped. The results showed the improvement of outcoupled efficiency of the device with microlens compared to that of the reference one. And from the analyses of the simulated data, the obtained appropriate shape of microlens is hemisphere, and the improvement of the device with hemispherical lens is 57% higher than that of the reference one.

Aluminum oxide(Al2O3) film deposited by atomic layer deposition (ALD) is known to supply excellent surface passivation properties on crystalline Si surfaces. Since Al2O3 has fixed negative charge, it forms effective surface passivation by field effect passivation on the rear side in p-type silicon solar cell. However, Al2O3 layer formed by ALD process needs very long process time, which is not applicable in mass production of silicon solar cells. In this paper, plasma-assisted ALD(PA-ALD) was applied to form Al2O3 to reduce the process time. Al2O3 synthesized by ALD on c-Si (100) wafers contains a very thin interfacial SiO2 layer, which was confirmed by FTIR and TEM. To improve passivation quality of Al2O3layer, the deposition temperature was changed in range of 150∼350℃, then the annealing temperature and time were varied. As a result, the silicon wafer with aluminum oxide film formed in 250℃, 400℃ and 10min for the deposition temperature, the annealing temperature and time, respectively, showed the best lifetime of 1.6ms. We also observed blistering with nanometer size during firing of Al2O3 deposited on p-type silicon.

PID (potential induced degradation) of PV module is the degradation of module due to the high potential difference between the front surface of solar cells and ground when PV modules operate under high humidity and temperature conditions. PID is generally derived from the positive sodium ions in front glass that are accumulated on P-type solar cells. Therefore, some papers for the electrical characteristic of only front components as glass, EVA sheet, solar cell under PID generation condition were revealed. In this paper, we analyzed the different outputs of module with PID by considering the all parts of module including the back side elements such as glass, back sheet. Mini modules with one solar cell were fabricated with the various parts on front and back sided of module. To generate PID of module in a short time, the all modules were applied?1,000 V in 85℃, 85% RH. The outputs, dark IV curves and EL images of all modules before and after experiments were also measured to confirm the main components of module for PID generation. From the measured results, the outputs of all modules with front glass were remarkably reduced and the performances of modules with back and front glass were greatly deteriorated. We suggest that the obtained data could be used to reduce the PID phenomenon of diverse modules such as conventional module and BIPV (building integrated photovoltaic) module.

This paper tried to develop a BLDC electric motor securing the 800 W-level watertight structure for driving the outboard motor. For this purpose, this paper developed a high-efficient controller-integrating BLDC electric motor system for underwater propulsion and designed and developed a triple watertight structure. Besides, this study developed a outboard motor integrating motor, propeller and controller based on the production of a controller for BLDC motor which can the speed control by selecting low-voltage, high-current power element. The characteristics of developed outboard motor were 24 V input voltage, over 800 W motor output, and max. 3,000 rpm motor, and 84.9% motor efficiency,and the developed outboard motor could secure the watertight structure in 5 m in water depth.

This paper dealt with the development of a LED floodlight for naval vessels to replace the conventional floodlight using an incandescent and a halogen lamp. We found a technical solution for current problems of conventional lights and also improved optical characteristics by developing a LED floodlight which has a typical long-lived light source with high efficiency. To satisfy the requirements specified in Korea Standard Vessels (KS V), the optical structure was designed with selected LED package and lens. A LED module was composed of 10 LEDs in series for stable luminous output, and an aluminium heat sink was adopted for effective heat-radiation design. The LED floodlight was fabricated as a module type so that it can easily replace the conventional light source. The power consumption of the prototype floodlight was only a tenth of a conventional one with the same optical performance. Also, a test showed the floodlight satisfied the electrical, optical and environmental requirements of the standards.

In order to develop a LED luminaire for naval-submarines which can replace a conventional one with two-compact fluorescent lamp (CFL) of 18 W, we analyzed the electrical and optical performance of the conventional luminaire. A LED luminaire was fabricated as compact as possible based on the analyzed data. The weight of the prototype LED luminaire is 1.8 kg, reducing up to 58% of the conventional one. The use of LED package for the submarine luminaire could reduce the power consumption from 38 W to 14.5 W with the same optical performance. The reason is that the optical efficacy of the LED luminaire improved by 2.47 times as 61.9 lm/W, compared to 25.1 lm/W for the conventional one.