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Previous issues
Volume 18(11); November 2005
Fabrication and Properties of AIN/SiC Structures using Reactive RF Magnetron Sputtering Method
J Korean Inst Electr Electron Mater Eng
2005;18(11):977-982.
Published online November 1, 2005
DOI:
https://doi.org/10.4313/JKEM.2005.18.11.977
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Study on the Shift in the P-E Hysteresis Curve and the Fatigue Behavior of the PZT Capacitors Fabricated by Reactive Sputtering
J Korean Inst Electr Electron Mater Eng
2005;18(11):983-989.
Published online November 1, 2005
DOI:
https://doi.org/10.4313/JKEM.2005.18.11.983
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34
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Fabrication and Characterization of Thermal Probe Array on SOI Substrates
J Korean Inst Electr Electron Mater Eng
2005;18(11):990-995.
Published online November 1, 2005
DOI:
https://doi.org/10.4313/JKEM.2005.18.11.990
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33
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Degradation of Ultra-thin SiO2 Film Incorporated with Hydrogen or Deuterium Bonds during Electrical Stress
J Korean Inst Electr Electron Mater Eng
2005;18(11):996-1000.
Published online November 1, 2005
DOI:
https://doi.org/10.4313/JKEM.2005.18.11.996
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46
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0
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A Stacked Polusilicon Strucutre by Nitridation in N2 Atmosphere for Nano-scale CMOSFETs
J Korean Inst Electr Electron Mater Eng
2005;18(11):1001-1006.
Published online November 1, 2005
DOI:
https://doi.org/10.4313/JKEM.2005.18.11.1001
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36
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Electric Characteristics of Disk-type Piezoelectric Transformer
J Korean Inst Electr Electron Mater Eng
2005;18(11):1007-1013.
Published online November 1, 2005
DOI:
https://doi.org/10.4313/JKEM.2005.18.11.1007
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34
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Study on the Bonding Process between Thin Film and Piezoelectric Materials
J Korean Inst Electr Electron Mater Eng
2005;18(11):1014-1018.
Published online November 1, 2005
DOI:
https://doi.org/10.4313/JKEM.2005.18.11.1014
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31
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MgO Thin Film Characterization in a Vacuum In-Line Sealing Process for High-efficiency PDP
J Korean Inst Electr Electron Mater Eng
2005;18(11):1019-1023.
Published online November 1, 2005
DOI:
https://doi.org/10.4313/JKEM.2005.18.11.1019
PDF
Citations
Citations to this article as recorded by
Preparation and Luminescence Properties of Y(P,V)O4:Eu3+Phosphor using Impregnation Method
Cheong-Hwa Han, Soo-Jong Kim
Journal of the Korean Ceramic Society.2011; 48(6): 565.
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Liquid Crystal Alignment Effects on SiOx Thin Film by Electron Beam Evaporation Method
J Korean Inst Electr Electron Mater Eng
2005;18(11):1024-1027.
Published online November 1, 2005
DOI:
https://doi.org/10.4313/JKEM.2005.18.11.1024
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30
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A Study on Electro-optical Characteristics Dependent on Surface Anchoring Energy in the Fringe-field Switching Mode
J Korean Inst Electr Electron Mater Eng
2005;18(11):1028-1032.
Published online November 1, 2005
DOI:
https://doi.org/10.4313/JKEM.2005.18.11.1028
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32
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Study on the Effect of the Operation Voltage according to the Reverse Twist for the Fringe Field Switching (FFS) Mode
J Korean Inst Electr Electron Mater Eng
2005;18(11):1033-1037.
Published online November 1, 2005
DOI:
https://doi.org/10.4313/JKEM.2005.18.11.1033
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33
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Dielectric Properties depending on Bias Voltage in Organic Light-emitting Diodes
J Korean Inst Electr Electron Mater Eng
2005;18(11):1038-1042.
Published online November 1, 2005
DOI:
https://doi.org/10.4313/JKEM.2005.18.11.1038
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51
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Phosphorus and Arsenic Diffusion used by Ampoule-tube Method into Undoped ZnO Thin Films and the Electrical Properties of p-type ZnO Thin Films
J Korean Inst Electr Electron Mater Eng
2005;18(11):1043-1047.
Published online November 1, 2005
DOI:
https://doi.org/10.4313/JKEM.2005.18.11.1043
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41
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Calculation of Changed Optical Path Length of Bi12SiO20 Single Crystal by the Electric Field
J Korean Inst Electr Electron Mater Eng
2005;18(11):1048-1055.
Published online November 1, 2005
DOI:
https://doi.org/10.4313/JKEM.2005.18.11.1048
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36
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Emission of Spin-polarized Light in Nitride-based Spin LEDs with Room-temperature Ferromagnetic (Ga,Mn) N Layer
J Korean Inst Electr Electron Mater Eng
2005;18(11):1056-1060.
Published online November 1, 2005
DOI:
https://doi.org/10.4313/JKEM.2005.18.11.1056
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31
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Resonant Frequency Modulation of High Temperature Superconductors Subjected to Optical Pulse Energy and Temperature
J Korean Inst Electr Electron Mater Eng
2005;18(11):1061-1067.
Published online November 1, 2005
DOI:
https://doi.org/10.4313/JKEM.2005.18.11.1061
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