For the measurements of surface shape milled using FIB (focused ion beam), the silicon bulk,Si3N4/Si, and Al/Si samples are used and observed the shapes milled from different sputtering rates,incident angles of Ga+ ions bombardment, beam current, and target material. These conditions also can beinfluenced the sputtering rate, raster image, and milled shape. The fundamental ion-solid interactions ofFIB milling are discussed and explained using TRIM programs (SRIM, TC, and T-dyn). The damagedlayers caused by bombarding of Ga+ ions were observed on the surface of target materials. The simulatedresults were shown a little bit deviation with the experimental data due to relatively small sputtering rateon the sample surface. The simulation results showed about 10.6% tolerance from the measured data at200 pA. On the other hand, the improved analytical model of damaged layer was matched well withexperimental XTEM (cross-sectional transmission electron microscopy) data.

Electrostatic discharge has been considered as a major reliability problem in the semiconductorindustry. ESD reliability is an important issue for these products. Therefore, each I/O (Input/Output) PADmust be designed with a protection circuitry that creates a low impedance discharge path for ESDcurrent. This paper presents a novel Lateral Insulated Gate Bipolar (LIGBT)-based ESD protection circuitwith latch-up immunity and high robustness. The proposed circuit is fabricated by using 0.18 um BCD(bipolar-CMOS-DMOS) process. Also, TLP (transmission line pulse) I-V characteristic of proposed circuitis measured. In the result, the proposed ESD protection circuit has latch-up immunity and highrobustness. These characteristics permit the proposed circuit to apply to power clamp circuit. Consequently, the proposed LIGBT-based ESD protection circuit with a latch-up immune characteristiccan be applied to analog integrated circuits.

In this paper, we develop a explosion-proof LED lighting (Ex circuit) circuit of Explosion-proofLED Signal Lamp (Ex LSL) to utilize the core module of the explosion-proof Local Control System (ExLCS) for offshore plant applications. And then analyzed its electrical, optical and thermal characteristics. Ex circuit was applied input voltage from AC/DC(12～254) V. In this experiments, stable light-oncharacteristics were confirmed by eyes for the every input voltages with min. 78,462 and max. 517,975cd/m2 of luminance. also Output current and output luminance was made proportional. Because themeasured maximum surface temperature of Ex circuit was 54.23℃ at AC 48 V, Ex circuit was rated withT6 of temperature class. Finally, Ex circuit was shown stable light on characteristics under the?50℃ and60℃ during 12 hours of test period.

In this study, in order to develop coupled vibration mode piezoelectric devices for Acoustic Emission(abbreviated as AE) sensor application with outstanding displacement and piezoelectric properties have been simulatedby ATILA FEM program. And, From the results of ATILA simulation, the AE sensor specimen, obtained superiorelectromechanical coupling factor and displacement, when the size of specimen is 3.45 mmΦ×3.45 mm with ratio ofdiameter/thickness(Φ/T)= 1.0. Therefore, AE sensor was fabricated by (Na,K,Li)(Nb,Ta) O3(abbreviated as NKL-NT)system piezoelectric ceramics using coupled vibration mode. The piezoelectric properties of NKL-NT ceramics wasexhibited that piezoelectric constant(d33), piezoelectric voltage constant(g33) and electro mechanical coupling factor(kp)have the excellent values of 261[pC/N], 40.10[10-3Vm/N], and 0.44, respectively. The manufactured piezoelectric devicewith ratio of Φ/T= 1.0 indicated the optimum values of resonant frequency(fr)= 556.5[kHz], antiresonant frequency(fa)=631.1[kHz], and effective electromechanical coupling factor(keff)= 0.473. The maximum sensitivity of the coupledvibration mode AE sensor was 55[dB] at the resonant frequency of 75[kHz]. The results show that the coupledvibration mode piezoelectric device is a promising candidate for the application AE sensor piezoelectric device.

A comparative study has been attempted for microwave and conventional sintering of lead-freeBi0.5Na0.5TiO3(BNT)-based multilayer ceramic actuators(MLAs). It was found that microwave sintering(MWS) could be successfully applied to the co-firing of piezoceramic/AgPd MLAs with a 10 timesshorter firing cycle as well as 100℃ lower firing temperature (850℃) for sufficient densification thanconventional furnace sintering (950℃). Furthermore, MWS-derived specimens showed better electricfield-induced strain than that of CFS-derived specimens by effectively suppressing interdiffusions betweenceramic and electrode layers.

The 0.99Bi0.5(Na0.78K0.22)0.5TiO3?0.01LaAlO3, 0.01LaMnO3 or 0.01LaFeO3 (0.99BNKT?0.01LA,0.01LM or 0.01LF) ceramics were prepared by a conventional mixed mothod. The structure andmorphology of the lead free ceramics were characterized by XRD (X-ray diffraction) and FE-SEM (fieldemission scanning electron microscopy). XRD results indicated that the BNKT ceramics modified by LA,LM or LF induced a transition from a ferroelectric tetragonal to a non-polar pseudo-cubic phase, leadingto decrease in the remnant polarization (Pr) and coercive field (Ec) in the P-E hysterisis loops. Theeffects of the BNKT ceramics modified by La-based ABO3 pervskite structure on the electric-fieldinduced strain were investigated, and the largest normalized unipolar strain (Smax/Emax) was found inBNKT-0.01LF ceramic.

Glass ceramic has a high mechanical strength and low sintering temperature. So, it can beused as a thick film substrate or a high strength insulator. A series of glass ceramic samples based onMgO-Al2O3-SiO2-ZrO2 (MASZ) were prepared by melting at 1,600℃, roll-quenching and heat treatment atvarious temperatures from 900℃ to 1,400℃. Dependent on the heat treatment temperature used, glassceramics with different crystal phases were obtained. Their nucleation behavior, microstructure andmechanical properties were investigated with differential thermal analysis (DTA), X-ray diffraction (XRD),scanning electron microscopy (SEM), and Vicker`s hardness testing machine. With increasing the heattreatment temperature of MASZ samples, their hardness and toughness initially increase and then reachthe maximum points at 1,300℃, and begin to decrease at above this temperature, which is likely to bedue to the softening of glass ceramics. As the content of ZrO2 in MAS glass ceramics increases from 7.0wt.% to 13 wt.%, Vicker`s hardness and fracture toughness increase from 853 Kg/mm2 to 878 Kg/mm2and 1.6 MPa??m1/2 to 2.4 MPa??m1/2 respectively, which seems to be related with the nucleation of elongatedphases like fiber.

In this work, in order to manufacture the photoelectrode of dye-sensitized solar cells, thedifferent anatase TiO2 paste was prepared by simple route using hydrothermal method. In comparisonwith the traditional preparing process, the hydrothermally synthesized TiO2 gel was used to make pastedirectly. Thus, the making process was simplified and the solar conversion efficiency was improved. Incomparison with 5.34% solar energy efficiency of HP-1 photoelectrode, the 6.23% efficiency of HDP-1electrode was improved by 16.67%. This is because hydrothermally synthesized TiO2 gel was used tomake paste directly, the dispersibility between TiO2 particles was improved and get the smoothernetwork, leading to the charge transport ability of the electron generated in dye molecular was improved. Further, HDP-2 photoelectrode delivered the best results with Voc (open circuit voltage), Jsc (shortcircuit current density) FF (fill factor) and η(solar conversion efficiency) were 0.695 V, 15.81 mA cm-2,61.48% and 6.80%, respectively. In comparison with 5.34% of HP-1 photoelectrode, it was improved by27.34%.

In this study, a transparent conductive oxide (TCO)-less dye-sensitized solar cells (DSSCs)was fabricated by using titanium (Ti) electrode to replace the Fluorine-doped tin oxide (FTO) for thereduction of manufacturing cost. Ti film was formed by electron beam evaporation method and the resultsshowed the sheet resistance of Ti electrodes with a thikness of 500 nm similar to FTO. In case of powerconversion efficiency (PCE), a DSSC with Ti electrodes showed a lower value than that with FTO by0.38%. For the investigation of the difference, the DSSCs were measured and analyzed by usingelectrochemical impedance analyzer (EIS).

In this study, the temperature characteristics of electrostatic capacity and dielectric loss for thesample of Teflon film which is degradated at the 120℃∼200℃ temperature range in the oven for 10 hourshas been measured in through the applied frequency range of 0.1 kHz∼4,800 kHz at temperature of 50℃,90℃, 130℃, 170℃. Also, in the same conditions, the frequency characteristics of electrostatic capacity anddielectric loss for the sample of Teflon film has been measured in through the applied temperature rangeof 30℃∼70℃ on setting frequency of 0.1 kHz, 1 kHz, 10 kHz, 100 kHz. The results of this study are asfollows. When the frequency range of 0.1 kHz∼4,800 kHz applied to the sample of Teflon film, theelectrostatic capacity has been measured at the temperature of 50℃, 90℃, 130℃, 170℃. Through thismeasurement, it found that the electrostatic capacity decreased with increasing temperature. Regarding thisresult, may be it is because the electromagnetic coupling is degraded by thermal degradation. When thesample of Teflon film heated at 280℃ for 10 hours in oven, the dielectric loss has changed from unstablestatus to stabilizing status with increasing the degradation temperature in the 120℃, 160℃, 200℃ range. Inthis measurement, the two spectrums of dielectric loss appeared. It considers that this spectrum ofdielectric loss appeared in 300 Hz is caused by the molecular motion of the C-F or OH group. Throughthis study, It found that the electrostatic capacity decreased with increasing frequency and temperature,and there is no change in dielectric loss, although the frequency increases.

In this paper, we propose a enhanced anti-corrosion property of the ground system by coatingthe CNT/PVDF composite film on it. Polymer material used for preventing the corrosion of groundsystem is polyvinylidene fluoride (PVDF), and conducting filler for obtaining conductivity of the compositefilm is multi-walled carbon nanotubes (MWCNTs). The MWCNTs were dispersed in the organic solventof methyl ethyl ketone 2-butanone (MEK) with different concentration ratios, and the PVDF was solvedin the MEK solvent with constant concentration ratio of 1 wt%. The CNT/PVDF composite solution wasperpared by mixing and re-dispersing the CNT solution and the PVDF solution. Finally, the CNT/PVDFcomposite films were fabricated by the spray coating method using the above composite solution. Electrical conductivity, surface states, and anti-corrosion property of the CNT/PVDF composite filmscoated on the Cu substrate were evaluated. We found that the CNT/PVDF composite film showedrelatively low resistance, hydrophobic surface state, and chemical stability. Consequently, we couldimprove the anti-corrosion property and maintain the electrical conductivity of the ground system bycoating the CNT/PVDF composite film on it.

ZnO nanowires were grown by hydrothermal synthesis process and piezoelectric poly vinylidenefluoride (PVDF) was then coated on top of the ZnO-nanowires by spray-coating technique. Thecomposite layer of ZnO-nanowires/PVDF was applied to an energy harvesting device based onpiezoelectric-conversion mechanism. A defined mechanical force was given to the nanogenerator device toevaluate their electric power generation characteristics, where output current density and voltage wereexamined. Electric power generation property of the ZnO-nanowires/PVDF based nanogenerator devicewas compared to that of the nanogenerator device with ZnO-nanowires as single active layer. Effect ofthe ZnO-nanowires on improvement of power generation was discussed to examine its feasibility for thenanogenerator device.

Photo electrode is an important component of DSSC, so this paper did some research on it. Through the method of adding PEG additive into TiO2 paste, the electrical characteristics and efficienciesof DSSCs with photo electrode surface area were studied. In the case of not adding PEG in TiO2 paste,26 ㎛ thickness TiO2 photo electrode shows 5.081% efficiency. The highest short circuit current densitywas 10.476 mA/cm2. The structure of porous TiO2 film can be controlled through changing the PEGadditive amount in TiO2 paste and the molecular weight of PEG. When the additive amount of PEG20,000 in TiO2 paste reaches 5%, the peak efficiency with 26 ㎛ thickness TiO2 photo electrode was5.387% and its highest current density were 11.084 mA/cm2.

This paper describes the development of a piezoelectric flextensional transducer, which aims toeffectively degrade the TCE contained in aqueous solution. In order to adjust the 1st flextensionalresonant frequency and output displacement of the flextensional transducer, the effect of the geometricalvariations on performance was analyzed using the finite element analysis (FEM). The results indicatedthat the effect of external shell`s thickness and curvature were most significant, and experimentalfabrication and characterization of a transducer was performed to confirm the results. To prove the capacity to degrade the TCE contained in aqueous solution, 50 and 100 ppm of TCE were prepared in sealed chamber, and investigated the removal rate of TCE through the time and initial concentration.

MgZnO has attracted a lot of attention for flexible device. In the flexible substrate, the crystalstructure of the thin films as well as the surface morphology is not good. Therefore, in this study, westudied on the effects of the oxygen pressure on the structure and crystallinity of Mg0.3Zn0.7O thin films deposited on PES substrate by using pulsed laser deposition. We used X-ray diffraction and atomic forcemicroscopy in order to observe the structural characteristics of Mg0.3Zn0.7O thin films. The crystallinity ofMg0.3Zn0.7O thin films with increasing temperature was improved, Grain size and RMS of the films wereincreased. UV-visible spectrophotometer was used to get the band gap energy and transmittance. Mg0.3Zn0.7O thin films showed high transmittance over 90% in the visible region. As increased workingpressure from 30 mTorr to 200 mTorr, the bandgap energy of Mg0.3Zn0.7O thin film were decreased from3.59 eV to 3.50 eV.