In this paper, we compared and analyzed 3D silicon-oxide-nitride-oxide-silicon (SONOS) multi layer flash memory devices fabricated on nitride or oxide layer, respectively. The device fabricated on nitride layer has inferior electrical properties than that fabricated on oxide layer. However, the device on nitride layer has faster program/erase speed (P/E speed) than that on the oxide layer, although having inferior electrical performance. Afterwards, to find out the reason why the device on nitride has faster P/E speed, 1/f noise analysis of both devices is investigated. From gate bias dependance, both devices follow the mobility fluctuation model which results from the lattice scattering and defects in the channel layer. In addition, the device on nitride with better memory characteristics has higher normalized drain current noise power spectral density (S(ID)/I(D)2), which means that it has more traps and defects in the channel layer. The apparent hooge`s noise parameter (αapp) to represent the grain boundary trap density and the height of grain boundary potential barrier is considered. The device on nitride has higher αapp values, which can be explained due to more grain boundary traps. Therefore, the reason why the devices on nitride and oxide have a different P/E speed can be explained due to the trapping/de-trapping of free carriers into more grain boundary trap sites in channel layer.

ZnO thin films were deposited on p-type 4H-SiC substrate by pulsed laser deposition. ZnO nanowires were formed on p-type 4H-SiC substrate by furnace. Ti/Au electrodes were deposited on ZnO thin film/SiC and ZnO nanowire/SiC structures, respectively. Structural and crystallographical properties of the fabricated ZnO thin film/SiC and ZnO nanowire/SiC structures were investigated by field emission scanning electron microscope and X-ray diffraction. In this work, resistance and sensitivity of ZnO thin film/SiC gas sensor and ZnO nanowire/SiC gas sensor were measured at 300℃ with various CO gas concentrations (0%, 90%, 70%, and 50%). Resistance of gas sensor decreases at CO gas atmosphere. Sensitivity of ZnO nanowire/SiC gas sensor is twice as big as sensitivity of ZnO thin film/SiC gas sensor.

We fabricated fully depleted (FD) SOI-based 1T-DRAM cells with planar channel or recessed channel and the electrical characteristics were investigated. In particular, the dependence of memory operating mode on the channel structure of 1T-DRAM cells was evaluated. As a result, the gate induced drain leakage current (GIDL) mode showed a better memory property for planar type 1T-DRAM. On the other hand, the impact ionization (II) mode is more effective for recessed type.

Fin-type SONOS (silicon-oxide-nitride-oxide-silicon) flash memory has emerged as novel devices having superior controls over short channel effects(SCE) than the conventional SONOS flash memory devices. However despite these advantages, these also exhibit undesirable characteristics such as corner effect. Usually, the corner effect deteriorates the performance by increasing the leakage current. In this paper, the corner effect of fin-type SONOS flash memory devices is investigate by 3D Process and device simulation and their electrical characteristics are compared to conventional SONOS devices. The corner effect has been observed in fin-type SONOS device. The reason why the memory characteristic in fin-type SONOS flash memory device is not improved, might be due to existing undesirable effect such as corner effect as well as the mutual interference of electric field in the fin-type structure as reported previously.

In this study, thickness vibration mode piezoelectric devices for AE sensor application were simulated using ATILA FEM program, and then fabricated. Trajectory resonant displacement and electro mechanical coupling factors of the piezoelectric devices were investigated. The simulation results showed that excellent displacement and electro mechanical coupling factor was obtained when the ratio of diameter/thickness(Ф/T) was 0.75. The piezoelectric device of Ф/T=0.75 exhibited the optimum values of fr=183 kHz, displacement=4.44×10(-7)[m], k33=0.69, which were suitable for the application of AE sensor piezoelectric device.

ZnO crystals with a baseball bat shape were synthesized without any catalysts through a simple thermal oxidation of ZnS powder in alumina crucible under air atmosphere. SEM images demonstrated that the bat structure was composed of two pieces of ZnO crystals, i.e hexagonal-shaped rod and inverted cone-shaped rod. X-ray diffraction (XRD) pattern revealed that the ZnO crystals had wurtzite hexagonal structure. Energy dispersive X-ray (EDX) spectrum showed that the ZnO was of high purity. A strong green emission peak at 510 nm was observed in cathodoluminescece spectrum.

In this research, we prepared Ga doped zinc oxide(ZnO:Ga, GZO) targets each difference sintering temperature 700℃, 800℃, and doping rate 1 wt.%, 2 wt.%, 3 wt.%. The characteristics of thin film on glass substrates which deposited by facing target sputtering in pure Ar atmosphere are reported. Ga doped zinc oxide film is attracted material through low resistivity, high transmittance, etc. When prepared target powder`s structure was investigated by scanning electron microscope, densification and coarsening by driving force was observed. For each ZnO:Ga films with a Ga2O3 content of 3 wt.% at input power of 45 W, the lowest resistivity of 9.967×10(-4) Ω·cm (700℃) and 9.846×10(-4) Ω ·cm (800℃) was obtained. the carrier concentration and mobility were 4.09 × 10(20) cm-3(700℃), 4.12×10(20) cm-3(800℃) and 15.31 cm2/V·s(700℃), 12.51 cm2/V·s(800℃), respectively. And except 1 wt.% Ga doped ZnO thin film, average transmittance of these samples in the range 350-800 nm was over 80%.

The characteristics of Ga-doped zinc oxide (GZO) thin films deposited at different deposition temperatures (TS∼250 to 550℃) on 4H-SiC have been investigated. Structural and electrical properties of GZO thin film on n-type 4H-SiC(0001) were investigated by using x-ray diffraction(XRD), atomic force microscopy(AFM), Hall effect measurement, barrier height from I-V curve and Auger electron spectroscopy(AES). XRD 2 θ scan shows GZO thin film has preferential orientation with c-axis perpendicular to SiC substrate surface. The lowest resistivity (∼1.9×10-4 Ωcm) was observed for the GZO thin film deposited at 400℃. As deposition temperature increases, barrier height between GZO and SiC was increased. Whereas, resistivity of GZO thin films as well as barrier height between GZO and SiC were increased after annealing process in air atmosphere. It has been found that the c-axis oriented crystalline quality as well as the relative amount of activated Ga3+ ions and oxygen vacancy may affect the electrical properties of GZO films on SiC.

We fabricated the electrolyte-insulator-semiconductor (EIS) devices with various high-k sensing membranes to realize a high quality pH sensor. The sensing properties of each high-k dielectric material were compared with those of conventional SiO2 (O) and SiO2/Si3N4 (ON) membranes. As a result, the high-k sensing membranes demonstrated better sensitivity and stability than the O and ON membranes. Especially, the SiO2/HfO2 (OH) stacked layer showed a high sensitivity and the SiO2/Al2O3 (OA) stacked layer exhibited an excellent chemical stability. In conclusion, the high-k sensing membranes are expected to have excellent operating characteristics in terms of sensitivity and chemical stability for the biosensor application.

We analyzed the movement and response time of charged particles according to particle-inserting methods to understand the variation of quantity of q/m of charged particles, which is a very important factor in electrical and optical characteristics of the charged particle type display, such as lifetime, response time, contrast ratio, reflectivity, etc. For our study we used white and black charged particles of which diameter is 20 ㎛, prepared pieces of ITO(indium tin oxide) coated glass substrate, and formed ribs on the glass substrates. The width of a rib is 30 ㎛ and the cell size is 220 ㎛ × 220 ㎛. As the particle-inserting methods, the white and black charged particles were respectively inserted into a front and a rear panel with a very small electric field and also the mixture of the white and black charged particles were inserted into a rear panel. As a result of the driving characteristics of charged particles, the factors about variation of quantity of q/m according to the particle inserting method was experimentally demonstrate, showing very different driving voltage, response time, the particle movement, etc.

In this study, we synthesized the chalcogenide glass(Ge19Sb23Se58) for infrared optics by melt-quenching method and verified the effect of cooling condition on the glass properties. The structural and optical properties of the glass were analyzed by XRD, FT-IR and SEM image. The glass synthesized under the cooling temperature of 980℃ shows transmittance of 58% at 8∼12 ㎛, which was decreased as the cooling temperature was decreased. In addition, thermal and hardness also were measured. From the analysis results, we ascertained the feasibility as a molding materials for infrared optics.

A variety of dyes are commercially available today, there is an ongoing need for new chromophoric systems and low-band-gap materials. For example, near-infrared (NIR) emission has received increased attention for applications in bioassays and medicine while NIR absorption is demanded for laser-welding of plastics or efficient blocking of heat rays. Most of the commercially available NIR materials are not suitable for such purposes owing to their insufficient stability. We have developed a novel NIR-absorbing polyaromatic dye. By extending the system of perylenebis(dicarboximide)s along the molecular long axis, we have obtained the higher homologue pentarylenebis(dicarboximide). We have tried to introduce imide functional group to pentarylene in order to increase chemical and thermal stability.

This paper dealt with the frequency component analysis of acoustic signals produced by corona and series-arc discharges as a diagnostic technique for closed-switchboards. Corona and series-arc discharge were simulated by a needle-plane electrode and an arc generator specified in UL1699, respectively. Acoustic signal was detected by a wideband acoustic sensor with a frequency bandwidth of 4 Hz∼100 kHz (-3 dB). We analyzed frequency spectrums of the acoustic signals detected in various discharge conditions. The results showed that acoustic signals mainly exist in ranges from 30 kHz to 60 kHz. From the experimental results, an acoustic detection system which consists of a constant current power supply (CCP), a low noise amplifier (LNA) and a band pass filter was designed and fabricated. The CCP separates the signal component from the DC source of acoustic sensor, and the LNA has a gain of 40 dB in ranges of 280 Hz∼320 kHz. The high and the low cut-off frequency are 30 kHz and 60 kHz, respectively. We could detect corona and series-arc discharges without any interference by the acoustic detection system, and the best frequency is considered in ranges of 30 kHz∼60 kHz.

We use UV(ultraviolet)-O3 treatment to increase the surface area and porosity of TiO2 films in dye-sensitized solar cells (DSSCs). After the UV-O3 treatment, surface area and porosity of the TiO2 films were increased, the increased porosity lead to amount of dye loading and solar conversion efficiency was improved. Field emission scanning electron microscopy images clearly showed that the nanocrystalline porosity of films were increased by UV-O3 treatment. The Brunauer, Emmett, and Teller surface area of the TiO2 films were increased from 0.71 cm2/g to 1.31 cm2/g by using UV-O3 treatment for 20 min. Also, UV-O3 treatment of TiO2 films significantly enhanced their solar conversion efficiency. The efficiency of the films without treatment was 4.9%, and was increased to 5.6% by UV-O3 treatment for 20 min. Therefore the process enhanced the solar conversion efficiency of DSSCs, and can be used to develop high sensitivity DSSCs.

In this paper, it tried to develop the core sensor for detection of micro magnetic field in electric wires. The sensor is non contact type and is consisted of ferrite core for low price. To investigate their properties for variations of current, it changed the number of winding and the length of sample core, it examined, to check the live wire situation in built-in wires, electrical characteristics due to difference between electric wires and core sensor. As the results, it verified live wire situation at the number of winding(5,000) and within length of 6[cm]. Also, it obtained magnetic field magnitude decreased inverse proportion ratio to a square about difference between electric wires and core sensor.