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Volume 29(2); February 2016

Regular Paper : Performance Improvement of Amorphous In-Ga-Zn-O Thin-film Transistors Using Different Source/drain Electrode Materials
Seung-tae Kim, Won-ju Cho
J Electr Electron Mater 2016;29(2):69-74.   Published online February 1, 2016
In this study, we proposed an a-IGZO (amorphous In-Ga-Zn-O) TFT (thin-film transistor) with off-planed source/drain structure. Furthermore, two different electrode materials (ITO and Ti) were applied to the source and drain contacts for performance improvement of a-IGZO TFTs. When the ITO with a large work-function and the Ti with a small work-function are applied to drain electrode and source contact, respectively, the electrical performances of a-IGZO TFTs were improved; an increased driving current, a decreased leakage current, a high on-off current ratio, and a reduced subthreshold swing. As a result of gate bias stress test at various temperatures, the off-planed S/D a-IGZO TFTs showed a degradation mechanism due to electron trapping and both devices with ITO-drain or Ti-drain electrode revealed an equivalent instability.
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Regular Paper : Study on the Design of Power MOSFET for Smart LED Driver ICs Package
Ey Goo Kang
J Electr Electron Mater 2016;29(2):75-78.   Published online February 1, 2016
This research was designed 700 level power MOSFET for smart LED driver ICs package. And we analyzed electrical characteristics of the power MOSFET as like breakdown voltage, on-resistance and threshold voltage. Because this research is important optimal design for smart LED ICs package, we designed power MOSFET with design and process parameter. As a result of this research, we obtained 60㎛ N-drift layer depth, 791.29 V breakdown voltage, 0.248 Ω·cm2 on resistance and 3.495 V threshold voltage. We will use effectively this device for smart LED driver ICs package
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Regular Paper : Study on Thermal Characteristics of Smart LED Driver ICs Package
Ey Goo Kang
J Electr Electron Mater 2016;29(2):79-83.   Published online February 1, 2016
This research was analyzed thermal characteristics that was appointed disadvantage when smart LED driver ICs was packaged and we applied extracted thermal characteristics for optimal layout design. We confirmed reliability of smart LED driver ICs package without additional heat sink. If the package is not heat sink, we are possible to minimize package. For extracting thermal loss due to overshoot current, we increased driver current by two and three times. As a result of experiment, we obtained 22 mW and 49.5 mW thermal loss. And we obtained optimal data of 350 mA driver current. It is important to distance between power MOSFET and driver ICs. If thhe distance was increased, the temperature of package was decreased. And so we obtained optimal data of 3.7 mm distance between power MOSFET and driver ICs. Finally, we fabricated real package and we analyzed the electrical characteristics. We obtained constant 35 V output voltage and 80% efficiency.
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Regular Paper : Design and Power Output Characteristics of an EYE-type Piezoelectric Energy Harvester
Seong-su Jeong, Byeong-ha Lee, Shin-chul Kang, Tae-gone Park
J Electr Electron Mater 2016;29(2):84-89.   Published online February 1, 2016
We present the results of a study of a piezoelectric generator that generates electricity by the application of tension to an element. A device is named “EYE-type generator”. The EYE-type generator consists of a rectangular ceramic and two elastic body plates that are attached to upper and lower surfaces of a ceramic. If tension is applied to both ends of the elastic body, that tension is transformed to pressure on the ceramic through a change in the form of the elastic body, causing a piezoelectric effect whereby electricity is generated by the ceramic. This generator is relatively durable because a forces are not applied directly to the ceramic. We examined dependencies of the generator’s output characteristics on the size of the ceramic and elastic body. A resonance and output characteristics were analyzed by using a finite element method. The generator was fabricated based on results of the analysis, and this was attached to a frequency-controllable vibrator to measure the output characteristics. The measured results were compared with results of the simulation, and the results pointed to the practicality of the design.
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Regular Paper : Microstructure and Piezoelectric Properties of Low Temperature Sintering PMW-PNN-PZT-BF Ceramics According to PNN Substitution
Sang-hoon Sin, Ju-hyun Yoo
J Electr Electron Mater 2016;29(2):90-94.   Published online February 1, 2016
In this work, [Pb(Mg1/2W1/2)0.03(Ni1/3Nb2/3)x(Zr0.5Ti0.5)0.97-xO3-BiFeO3] (x=0.02 to 0.12) composition ceramics were fabricated by the conventional soild state reaction method and their microstructure and piezoelectric properties were investigated according to PNN substitution. The addition of small amount of BiFeO3, Li2CO3, and CaCO3 were used in order to decrease the sintering temperature of the ceramics. The XRD (x-ray diffraction patterns) of all ceramics exhibited a perovskite structure. The sinterability of PMW-PNN-PZT-BF ceramics was remarkably improved using liquid phase sintering of CaCO3, Li2CO3. However, it was identified from of the X-ray diffraction patterns that the secondary phase formed in grain boundaries decreased the piezoelectric properties. According to the substitution of PNN, the crystal structure of ceramics is transformed gradually from a tetragonal to rhombohedral phase. The x=0.10 mol PNN-substituted PMW-PNN-PZT-BF ceramics sintered at 920 showed the optimum values of piezoelectric constant(d33), piezoelectric figure of merit(d33·g33), planar piezoelectric coupling coefficient(kp) and density : d33=566 [pC/N], g33=29.28 [10-3mV/N], d33·g33=16.57 [pm2/N], kp=0.61, density=7.82 [g/cm3], suitable forduplex ultrasonic sensor application.
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Regular Paper : Study of Growth and Temperature Dependence of SnS Thin Films Using a Rapid Thermal Processing
Ji-hyun Shim, Je Ha Kim
J Electr Electron Mater 2016;29(2):95-100.   Published online February 1, 2016
We fabricated a tin sulfide (SnS) layer with Sn/Mo/glass layers followed by a RTP (rapid thermal processing), and studied the film growth and structural characteristics as a function of annealing temperature and time. The elemental sulfur (S) was cracked thermally and applied to form SnS polycrystalline film out of the Sn percursor at pre-determined pressures in the RTP tube. The sulfurization was done at the temperature from 200℃ to 500℃ for a time period of 10 to 40 min. At ≤ 300℃, 20 min., p-type SnS thin films was grown and showed the best composition of at.% of [S]/[Sn] . 1 and [111] preferred orientation as investigated from using XRD (X-ray diffraction) analysis and EDS (energy dispersive spectroscopy) and SEM (scanning electron microscopy), and optical absorption by a UV-VIS spectrometer. In this paper, we report the details of growth characteristics of single phase SnS thin film as a function of annealing temperature and time associated with the pressure and ambient gas in the RTP tube.
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Regular Paper : Optimization of Crystallization Condition for Transparent LAS Glass-ceramic Via Differential Thermal Analysis
Yun-gon Moon, Tae-young Lim, Mi Jai Lee, Jin-ho Kim, Dae-woo Jeon, Jong Hee Hwang
J Electr Electron Mater 2016;29(2):101-105.   Published online February 1, 2016
The basic characteristics of glass are highly fragile and brittle consequences the ultimate purpose of glass manufacturing is to make a transparent glass with complex shape. In order to solve this problem, mechanical properties of glass can be increased by crystallization of its amorphous glass. However, glass-ceramics has become opaque through crystallization process due to the distracted interface of glass by precipitated particles. This study has been investigated thermal processing conditions of LAS transparent glass-ceramic by using DTA (differential thermal analysis), in order to control size of precipitated particle and then fabricate transparent glass-ceramic. DTA indicated that crystallization peak area was declined with increased nucleation temperature. Subsequently, we have been established optimum temperature for crystallization depending on the nucleation temperature. The transmission and thermal expansion were measured after crystallization, and the size of precipitated particle was identified in range of 20~100 nm by FE-SEM. In addition, by setting the optimized crystallization condition, with high transmission and low thermal expansion glass was synthesized through this experiment.
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Regular Paper : Electromagnetic Properties of Nano Composite Conductor
Sang-heon Lee
J Electr Electron Mater 2016;29(2):106-109.   Published online February 1, 2016
The YBaCuO superconducting bulks were prepared by the thermal diffusion process involving the peritectic reaction to investigate the effect on microstructure and superconductivity. All the diffused YBaCuO could be successively separated from superconducting 123 phase by applying the thermal diffusion process. Electromagnetic properties of treated and untreated YBaCuO superconductor were evaluated to investigate the pinning effect. It was confirmed experimentally that a large amount of magnetic flux was trapped in the thermal treated superconducting bulk than that in the untreated one, indicating that the pinning centers of magnetic flux are related closely to the occurrence mechanism of the magnetic effect.
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Regular Paper : Microstructure and Electrical Properties of (YNdSm)-Ba-Cu-O High Tc Composite Superconductors by Zone Melting Process
So-jung Kim, Sang-heon Lee
J Electr Electron Mater 2016;29(2):110-113.   Published online February 1, 2016
(YNdSm)-Ba-Cu-O system high Tc composite superconductors were directionally grown by zone melting process, having large temperature gradient, in air atmosphere. Cylindrical green rods of (YNdSm)1.8Ba2.4Cu3.4Ox [(YNS)1.8]composite oxides by CIP (cold isostatic pressing) method using rubber mold were fabricated. Themicrostructure and superconducting properties were investigated by XRD, TEM and SQUID magnetometer. The size of nonsuperconducting (YNdSm)2BaCuO5 inclusions of the melt-textured (YNS)1.8 sample with CeO2 additive were remarkably reduced and uniformly distributed within the superconducting (YNS)1.8 matrix. (YNS)1.8 samples, with / without CeO2 additive, showed an onset Tc ≥ 90 K and sharp superconducting transition. The critical current density Jc value of the (YNdSm)1.8 superconductor with CeO2 additive were 840 A, 1.2×104 A/cm2 in 77 K, 0Tesla by direct current transport method.
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Regular Paper : Analysis of Propagation Characteristics of Acoustic Signal in Insulation Oil
Min-young Yun, Kyoung-soo Park, Guoming Wang, Sun-jae Kim, Gyung-suk Kil
J Electr Electron Mater 2016;29(2):114-119.   Published online February 1, 2016
This paper dealt with the propagation characteristics of acoustic signal in insulation oil for the purpose of improving the reliability of AE (acoustic emission) method used for condition monitoring of oil-immersed transformers. A discharge source was placed in insulation oil and AE sensors (fc :140 kHz) were attached on the oil tank to study the changes of velocity and propagation path with the depth and distance. The average velocity was 1,436 m/s and the velocity decreased with the increase of depth from the oil surface to 430 mm. The propagation paths were classified into three sections by the shortest reflection path of the detected signal. The minimum distinguishable distance in each section was 70 mm. It was also verified that PD (partial discharge) with a magnitude over than 500 pC can be detected by the AE sensors.
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Regular Paper : Fabrication and Electrical Characteristics of Transparent and Bendable a-IGZO Thin-film Transistors
Suk Hyung Park, Kyoung Ah Cho, Hyun Gon Oh, Sang Sig Kim
J Electr Electron Mater 2016;29(2):120-124.   Published online February 1, 2016
In this study, we fabricate transparent and bendable a-IGZO (amorphous indium gallium zinc oxide) TFTs (thin-film transistors) with a-IZO (amorphous indium zinc oxide) transparent electrodes on plastic substrates and investigate their electrical characteristics under bending states. Our a-IGZO TFTs show a high transmittance of 82% at a wavelength of 550 nm. And these TFTs have an Ion/Ioff ratio of 1.8×108, a field effect mobility of 15.4 cm2/V·s, and a subthreshold swing of 186 mV/dec. The good electrical characteristics are retained even after bending with a curvature radius of 18 mm corresponding to a strain of 0.5% owing to mechanical durability of the transparent electrodes used in this study.
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Regular Paper : Thermal Analysis for Improvement of Heat Dissipation Performance of the Rail Anchoring Failure Detection Module
Won Kyu Chae, Young Park, Sam Young Kwan, Jae Hyeong Lee
J Electr Electron Mater 2016;29(2):125-130.   Published online February 1, 2016
In this paper, various heat dissipation designs for a rail anchoring failure detection module were investigated by a thermal flow analysis. For the detection module with the heat dissipation design on the overall housing surface, an average temperature inside the module was lowered by 25℃ when compared to no heat dissipation design. In addition, an internal heat-flow blocking layer and an heat conduction layer inserted between the LED module and housing case were effective in reducing the temperature in the rail anchoring failure detection, which has a limited space for installation and little air flow. Especially, the temperature near LED module decreased below 55℃ when the optimal heat dissipation design was applied.
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