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Volume 18(3); March 2005

Investigation for Multi-bit per Cell on the CSL-NOR Type SONOS Flash Memories
J Korean Inst Electr Electron Mater Eng 2005;18(3):193-198.   Published online March 1, 2005
DOI: https://doi.org/10.4313/JKEM.2005.18.3.193
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Characterization of CdS Thin Films and CdS/CdTe Heterojunction Prepared by Different Techniques
J Korean Inst Electr Electron Mater Eng 2005;18(3):199-205.   Published online March 1, 2005
DOI: https://doi.org/10.4313/JKEM.2005.18.3.199
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A Study for Stable End Point Detection in 90 nm WSix/poly-Si Stack-down Gate Etching Process
J Korean Inst Electr Electron Mater Eng 2005;18(3):206-211.   Published online March 1, 2005
DOI: https://doi.org/10.4313/JKEM.2005.18.3.206
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Modified Illumination with a Concentric Circular Grating at the Backside of a Photomask
J Korean Inst Electr Electron Mater Eng 2005;18(3):212-215.   Published online March 1, 2005
DOI: https://doi.org/10.4313/JKEM.2005.18.3.212
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Optimal Design of Spiral Inductors on Silicon Substrates for RF ICs
J Korean Inst Electr Electron Mater Eng 2005;18(3):216-218.   Published online March 1, 2005
DOI: https://doi.org/10.4313/JKEM.2005.18.3.216
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Polishing Properties by Change of Slurry Temperature in Oxide CMP
J Korean Inst Electr Electron Mater Eng 2005;18(3):219-225.   Published online March 1, 2005
DOI: https://doi.org/10.4313/JKEM.2005.18.3.219
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Electric Field Strength and Compressive Stress Effects on the Displacement of Multilayered Ceramic Actuators
J Korean Inst Electr Electron Mater Eng 2005;18(3):248-252.   Published online March 1, 2005
DOI: https://doi.org/10.4313/JKEM.2005.18.3.248
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Characteristics of CrOx Thin-films for High Precision Resistors
J Korean Inst Electr Electron Mater Eng 2005;18(3):253-258.   Published online March 1, 2005
DOI: https://doi.org/10.4313/JKEM.2005.18.3.253
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2.2-inch QCIF+ a-Si TFT- LCD using Integrated Row Driver Circuits
J Korean Inst Electr Electron Mater Eng 2005;18(3):264-268.   Published online March 1, 2005
DOI: https://doi.org/10.4313/JKEM.2005.18.3.264
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Variance of Initial Fault Current Limiting Instant in Flux-Lock Type SFCL
J Korean Inst Electr Electron Mater Eng 2005;18(3):269-275.   Published online March 1, 2005
DOI: https://doi.org/10.4313/JKEM.2005.18.3.269
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Fabrication and Characteristics of Magnetic Tunneling Transistors using the Amorphous n-Type Si Films
J Korean Inst Electr Electron Mater Eng 2005;18(3):276-283.   Published online March 1, 2005
DOI: https://doi.org/10.4313/JKEM.2005.18.3.276
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