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Most cited
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EDITORIAL POLICIES
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Keywords
Chemical mechanical polishing (2)
CMP (2)
Dielectric properties (2)
MOCVD (2)
(102) FWHM (1)
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Authors
Sung Gap Lee (1)
Young Jae Shim (1)
Keywords
Chemical mechanical polishing (2)
CMP (2)
Dielectric properties (2)
MOCVD (2)
(102) FWHM (1)
Acid-amplifier (1)
AFM (1)
AFM images (1)
Annealing (1)
Apparent contact area (1)
Benzene (1)
Bias voltage (1)
Burn-in (1)
Coplanar stripline resonator (1)
Cyclic voltammetry (1)
DC magnetron sputter (1)
DNA chip microarray (1)
Dye-sensitized solar cells (1)
Edge effect (1)
Electrical properties (1)
Electro-optical conversion device (1)
Electrochemical corrosion (1)
Ferricyanide/ferrocyanide solution (1)
Ferroelectric (1)
Groove (1)
Hall effect (1)
Hoechst 33258 (1)
In segregation (1)
InAs (1)
Linear sweep voltammetry (1)
Logarithm mixing rule (1)
mercaptohexyl moiety (1)
Metal organic chemical vapor deposition (1)
Mg4Ta2O9 (1)
Microfabrication technology (1)
Microwave (1)
Microwave dielectric (1)
Multi chip package (1)
NiCr thin film (1)
OLEDs (1)
Open-circuit voltage (1)
Optical pulse (1)
Photo-catalytic (1)
Photoresist (1)
Photosensitivity (1)
Potentiodynamic polarization test (1)
PZT ceramics (1)
Quality factor (1)
Quantum dot (1)
Reliability (1)
Removal rate (1)
RF magnetorn sputtering (1)
Screen printing (1)
Short-circuit current (1)
SiN mask (1)
Sintering temperature (1)
Sintering time (1)
SRAM (1)
SrTiO3 (1)
Stiffness (1)
Stress (1)
Structural properties (1)
TD density (1)
Thermal stability (1)
Thick films (1)
TiO2 (1)
Transmittance (1)
Tunable (1)
UV GaN-LED (1)
Volatile organic compound (1)
Within wafer non-uniformity (1)
WIWNU (1)
X-ray photoelectron spectroscopy (1)
XPS (1)
ZnO-Pr6O11-based varistors (1)
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Previous issues
Volume 18(6); June 2005
Effect of Bias Voltage of Influenced on a Property of Electrical and Optical of ZnO:Al
J Korean Inst Electr Electron Mater Eng
2005;18(6):493-498.
Published online June 1, 2005
DOI:
https://doi.org/10.4313/JKEM.2005.18.6.493
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26
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Effect of Aromatic Acid Amplifier, 2-hydroxy-2`-tosyloxy Biphenyl, on the kind of Resist Resins
J Korean Inst Electr Electron Mater Eng
2005;18(6):499-505.
Published online June 1, 2005
DOI:
https://doi.org/10.4313/JKEM.2005.18.6.499
PDF
30
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0
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Wafer Burn-in Method for SRAM in Multi Chip Package
J Korean Inst Electr Electron Mater Eng
2005;18(6):506-509.
Published online June 1, 2005
DOI:
https://doi.org/10.4313/JKEM.2005.18.6.506
PDF
34
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0
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Excitation Light Source Dependence of Photo-catalytic Efficiency for Benzene Removal
J Korean Inst Electr Electron Mater Eng
2005;18(6):510-514.
Published online June 1, 2005
DOI:
https://doi.org/10.4313/JKEM.2005.18.6.510
PDF
32
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0
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Electrochemical Polarization Characteristics and Effect of the CMP Performances of Tungsten and Titanium Film by H2O2 Oxidizer
J Korean Inst Electr Electron Mater Eng
2005;18(6):515-520.
Published online June 1, 2005
DOI:
https://doi.org/10.4313/JKEM.2005.18.6.515
PDF
33
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0
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A Study on the Within Wafer Non-uniformity of Oxide Film in CMP
J Korean Inst Electr Electron Mater Eng
2005;18(6):521-526.
Published online June 1, 2005
DOI:
https://doi.org/10.4313/JKEM.2005.18.6.521
PDF
36
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0
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Epitaxy of Self-assembled inAs Quantum Dots on Si Substrates by Atmospheric Pressure Metalorganic Chemical Vapor Deposition
J Korean Inst Electr Electron Mater Eng
2005;18(6):527-531.
Published online June 1, 2005
DOI:
https://doi.org/10.4313/JKEM.2005.18.6.527
PDF
32
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0
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K-band Coplanar Stripline Resonator for Microwave Tunable Devices
J Korean Inst Electr Electron Mater Eng
2005;18(6):532-537.
Published online June 1, 2005
DOI:
https://doi.org/10.4313/JKEM.2005.18.6.532
PDF
41
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0
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Microwave Dielectric Properties of the 0.7Mg4Ta2O9-0.3SrTiO3 Ceramics with Sintering Temperature
J Korean Inst Electr Electron Mater Eng
2005;18(6):538-542.
Published online June 1, 2005
DOI:
https://doi.org/10.4313/JKEM.2005.18.6.538
PDF
31
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0
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Electrical and Dielectric Properties of ZnO-Pr6O11-based Varistors with sintering Time
J Korean Inst Electr Electron Mater Eng
2005;18(6):543-549.
Published online June 1, 2005
DOI:
https://doi.org/10.4313/JKEM.2005.18.6.543
PDF
27
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0
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Structural and Dielectric Properties of Pb(Zr0.2Ti0.8)O3 Thick Films Fabricated using a Screen Printing Technologies
Sung Gap Lee, Young Jae Shim
J Korean Inst Electr Electron Mater Eng
2005;18(6):550-553.
Published online June 1, 2005
DOI:
https://doi.org/10.4313/JKEM.2005.18.6.550
PDF
27
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0
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Micro Structure and Surface Characteristics of NiCr Thin Films Prepared by DC Magnetron Sputter according to Annealing Conditions
J Korean Inst Electr Electron Mater Eng
2005;18(6):554-559.
Published online June 1, 2005
DOI:
https://doi.org/10.4313/JKEM.2005.18.6.554
PDF
28
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0
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Genomic Detection using Electrochemical method
J Korean Inst Electr Electron Mater Eng
2005;18(6):560-570.
Published online June 1, 2005
DOI:
https://doi.org/10.4313/JKEM.2005.18.6.560
PDF
37
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0
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Comparison of Electrical Properties and AFM Images of DSSCs with Various Sintering Temperature of TiO2 Electrodes
J Korean Inst Electr Electron Mater Eng
2005;18(6):571-575.
Published online June 1, 2005
DOI:
https://doi.org/10.4313/JKEM.2005.18.6.571
PDF
35
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0
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Optical Modulation Characteristics of Red Organic Light Emitting Diodes for the Application on the Electro-optical Conversion Device
J Korean Inst Electr Electron Mater Eng
2005;18(6):576-581.
Published online June 1, 2005
DOI:
https://doi.org/10.4313/JKEM.2005.18.6.576
PDF
42
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0
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A Study of Properties of GaN grown using In-situ SiN Mask by MOCVD
J Korean Inst Electr Electron Mater Eng
2005;18(6):582-586.
Published online June 1, 2005
DOI:
https://doi.org/10.4313/JKEM.2005.18.6.582
PDF
35
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0
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