Dye-sensitized solar cells (DSSCs) suffer from efficiency limitations due to interfacial charge recombination at the TiO₂/dye/electrolyte interface. In this study, aminopropyltrimethoxysilane (APS) was introduced onto nanoporous TiO₂ photoelectrodes via a dip-coating process with controlled coating times to investigate the effect of silanization time on interfacial charge transport behavior. Unlike concentration-driven structural modification, this work focuses on the evolution of the APS-modified interface governed by reaction time. The DSSC with 30 min APS treatment exhibited the highest power conversion efficiency of 5.34%, representing a 19% enhancement compared to the untreated device (4.49%), mainly due to increased short-circuit current density and open-circuit voltage. However, prolonged coating times (2 h and 24 h) resulted in a significant decrease in photocurrent density, leading to reduced device performance despite partial improvement in recombination resistance. These results are attributed to the time-dependent evolution of the APS interfacial layer. At moderate coating time, APS provides effective surface functionalization, enhancing dye adsorption and suppressing interfacial recombination. In contrast, prolonged coating is expected to induce increased surface coverage and silane condensation, which can hinder electron injection and increase charge transport resistance. Therefore, the photovoltaic performance is governed by a trade-off between recombination suppression and charge injection efficiency, controlled by the silanization time. This study highlights the critical role of interfacial reaction kinetics in determining charge transport behavior and provides an effective strategy for optimizing DSSC performance through time-dependent interface engineering.

This study proposes an optimization strategy for the over-current protection (OCP) parameters of a lithium iron phosphate (LiFePO₄, LFP) battery system used in electric golf carts operating under high motor-load conditions. Real-world hillclimbing tests were conducted under four clearly defined payload/passenger conditions to analyze the transient discharge-current pro-file, voltage sag, and cell-temperature response. The maximum discharge current reached -238.2 A under the 200 kg cargopayload and one-passenger condition, and the current interval exceeding 150 A lasted up to 27 s. The maximum instantaneous power was 11.05 kW. Thermal analysis showed that the cell-temperature rise was within 2°C and the maximum measured cell temperature was 22.3°C. Linear regression of voltage and current yielded R² = 0.9368 and dV/dI = 0.0126 Ω, which was used as the DC internalresistance estimate. Based on these quantitative results and the cell specification limit of 300 A continuous discharge, the OCP threshold was reviewed from 250 A to 280 A to improve driving continuity while remaining below the allowable continuous-discharge current. EIS-based SOH estimation and the AI-BMS variable protection logic are presented as an extension framework for reflecting temperature and aging effects in future OCP-setting decisions.

Recently, piezoelectric devices, such as ultrasonic surgery, ultrasonic atomizer, and ultrasonic speaker, are analyzed and designed by finite element simulation methods. However, the discrepancy between the design and the experiment results of the device typically occurs due to the inaccuracy of the piezoelectric material properties. To improve the simulation accuracy, the material properties of the PZT ceramics were better refined using parameter estimation method. The material parameters are elastic stiffness c^E_ij and piezoelectric constant e_ij of PZT ceramics. The impedance curve characteristics for the LTE mode of PZT ceramics were calculated. The mismatch between the simulation and the experimental data were compared and minimized by a least square method. Finally, the simulated impedance data were compared with the experimental data for the various vibration modes of PZT ceramics and the optimized material properties of PZT ceramics were verified. To further verify the accuracy, this method was also applied to piezoelectric PMN-PT single crystals.

A variable vacuum capacitor (VVC), which is a variable element, is used to match impedance in plasma that changes with various impedance values, and its use is expanding with the rapid growth of the semiconductor business. Since VVCs have to secure insulation performance and vary capacitance within a compact size, electrode design and manufacturing are very important; thus, various technologies such as part design and manufacturing technology and vacuum brazing technology are required. In this study, based on the model of an advanced foreign company that is widely used for impedance matching in the manufacture of semiconductors and displays, a VVC that can realize the same performance was developed. The electrode part was designed, the consistency was confirmed through analysis, and the precision of capacitance was improved by designing a cup-type electrode to secure the concentricity of the electrode. As a result of the evaluation, all requirements was satisfied. We believe that self-development will be possible if satisfactory responses are received through evaluation by VVC consumers in the future.

In this study, we investigated the crystal defects and grain boundary properties in a ZZCCC (ZnO-Zn₂BiVO₆-Co₃O₄-Cr₂O₃-CaCO₃) varistor, with the liquid-phase sintering aid Zn₂BiVO₆ developed by our laboratory. The ZZCCC varistor sintered at 1,200℃ exhibited excellent nonlinear current-voltage characteristics (α=63), with oxygen vacancy (V₀^·; 0.35 eV) as a main defect, and an apparent activation energy of 1.1 eV with an electrically single grain boundary. Therefore, among the various additives to improve the electrical properties of ZnO varistors, if Zn₂BiVO₆ is used as a liquid phase sintering aid, it will be ideal to use Co for the oxygen vacancy and Ca for the electrically single grain boundary. This will allow the good properties of ZnO varistors to be maintained up to high sintering temperatures.

To study the frequency response characteristics of alternating-current-driven organic light-emitting diodes (OLEDs), we fabricated blue-fluorescent OLEDs and analyzed their electroluminescent characteristics according to the alternating current voltage and frequency. The luminance-frequency characteristics of alternating-current-driven OLED was similar to that of a low-pass filter，and the luminance of high-voltage OLED decreased at higher frequency than low-voltage OLED. The luminance characteristics of the OLED according to the frequency is due to the capacitive reactance in the OLED, generated during the alternating current driving. The frequency response characteristics of the OLED according to the voltage is due to the decrease in internal resistance of the organic layer. In addition, the negative voltage component of the alternating current did not affect the frequency response of the OLED. Therefore, the electroluminescent characteristics of OLED with an alternating current power of 60 Hz are not influenced by the frequency.

Liquid phases in ZnO varistors cause more complex phase development and microstructure, which makes the control of electrical properties and reliability more difficult. Therefore, we have investigated 2 mol% CaCO₃ doped ZnO-Co₃O₄-Cr₂O₃-La₂O₃ (ZCCLCa) bulk ceramics as one of the compositions without liquid phase sintering additive. The results were as follows: when CaCO₃ is added to ZCCLCa (644 Ωcm) acting as a simple ohmic resistor, CaO does not form a secondary phase with ZnO but is mostly distributed in the grain boundary and has excellent varistor characteristics (high nonlinear coefficient α＝78, low leakage current of 0.06 μA/㎠, and high insulation resistance of 1×10¹¹ Ωcm). The main defects Zn_i^·· (AS: 0.16 eV, IS & MS: 0.20 eV) and V˙_o (AS: 0.29 eV, IS & MS: 0.37 eV) were found, and the grain boundaries had 1.1 eV with electrically single grain boundary. The resistance of each defect and grain boundary decreases exponentially with increasing the measurement temperature. However, the capacitance (0.2 nF) of the grain boundary was ~1/10 lower than that of the two defects (~3.8 nF, ~2.2 nF) and showed a tendency to decrease as the measurement temperature increased. Therefore, ZCCLCa varistors have high sintering temperature of 1,200℃ due to lack of liquid phase additives, but excellent varistor characteristics are exhibited, which means ZCCLCa is a good candidate for realizing chip type or disc type commercial varistor products with excellent performance.

This study introduces a new investigation report on the microstructural and electrical property changes of ZnO-Zn₂BiVO₆-Mn₃O₄ (ZZMn), where 0.33 mol% of Mn₃O₄ and 0.5 mol% of Zn₂BiVO₆ were added to ZnO (99.17 mol%) as liquid phase sintering aids. Zn₂BiVO₆ contributes to the decrease of sintering temperatures by up to 800℃, and segregates its particles at the grain boundary, while Mn₃O₄ enhances α, the nonlinear coefficient, of varistor properties up to α＝62. In comparison, when the sintering temperature is increased from 800℃ to 1,000℃, the resistivity of ZnO grains decreases from 0.34 Ωcm to 0.16 Ωcm, and the varistor property degrades. Oxygen vacancy (V_o^·) (P1, 0.33~0.36 eV) is formed as a dominant defect. Two different kinds of grain boundary activation energies of P2 (0.51~0.70 eV) and P3 (0.70~0.93 eV) are formed according to different sintering temperatures, which are tentatively attributed to be ZnO/Zn₂BiVO₆-rich interface and ZnO/ZnO interface, respectively. Accordingly, this study introduces a progressive method of manufacturing ZnO chip varistors by way of sintering ZZMn-based varistor under 900℃. However, to procure a higher reliability, an in-depth study on the multi-component varistors with double-layer grain boundaries should be executed.

In this paper, we introduce an electrocardiogram (ECG) system designed to solve problems caused by wetgels and motion artifacts in measuring active movement. The system is called a dry-contact ECG and was designed by considering impedance matching between skin and electrode as well as the frictional electricity between electrode and clothes. In order to create the system, we measured impedance on the skin-electrode interface, and the result was applied to the electronic circuit scheme. Moreover, we added an electrode on the back of the measurement electrode to make a flow path to ground the electrical noise. The final ECG circuit and novel electrode were used to detect real human cardiac signals from a subject who was tested while standing still and walking. The signals obtained from the two activities were nicely shaped, without any motion artifact noise. We took electrode size into account in this study because the impedance depended on the area of the electrode. An electrode of 50 mm diameter showed the best curve for the ECG signal without any electrical noise.

Ultrasound imaging by using piezoelectric materials, such as lead zirconium titanate (PZT) has been oneof the most preferred modes of imaging in the medical field due to its simple, low cost and non-ionizing radiation in comparison to other imaging techniques. Recently, the market demand for portable ultrasound is becoming larger with applications in developing countries, disaster area, military, and emergency purposes. However, most of ultrasound probes used is bulky and high power consumable, so unsuitable for such applications. In this study, the 3 layered ceramic specimen consisted of 128 pitches of 420 μm in width and 450 μm in thickness were prepared by using the Ti-rich PZT compositions co-fired at 1,050℃. Their electrical and ultrasound pulse-echo properties were investigated and compared to the single layer specimen. The 3 layered ultrasound probe showed 1.584 V of Vp-p, which is 3.2 times higher than single layered one, implying that it would allow effectively such a portable ultrasound probe system. The result were discussed in terms of higher capacitance, lower impedance and higher dielectric coefficient of the 3 layered ultrasound probe.

3 mol% Co-added Ni(OH)2 fine powders, which showed β-phase, as positive electrode materials have been fabricated using NiSO4；6H2O aqueous solution by ultrasonic spray-chemical precipitation and subsequent hydrothermal method, and sheet-like Ni nanopowder was fabricated by mechano-chemical reduction method. The addition effects of the sheet-like Ni nanopowder on the electrochemical properties of the positive electrode in Ni-Zn Redox flow battery were investigated. Impedance spectroscopy revealed that the addition of the sheet-like Ni nanopowder resulted in decrease in the electrical resistivity; 10 wt.% addition reduced the electrical properties by a fifth. Cyclic voltammetry showed the addition of the sheet-like Ni nanopowder resulted in decrease in the potential difference of oxidation and reduction; this means the increase in the reversability for electrode reduction. Charge/discharge measurement confirmed that the addition of the sheet-like Ni nanopowder resulted in the increase in the discharge efficiency.

This paper carried out the comparative analysis on ground impedance of a carbon block and a copper rod. Two types of grounding electrode were compared; a carbon block (L: 1 m, ф : 245 mm)buried at depth of 0.8m and a three-linked copper rod (L : 1 m, : ф : 10 mm) of equilateral triangles with 1 m spacing. Ground impedance depending on applied current was evaluated by the application of a sine wave current with 60 Hz~3.5 MHz, fast-rise pulse with rising time of 200 ns, a standard lightning impulse of 8/20 ㎲ and a 600 Hz square wave. Ground impedance for both electrodes were almost the value below 100 KHz, and increased rapidly afterwards. The maximum ground impedance appeared 400 Ω at around 1.5 MHz. Ground impedance of the block was lower at the square wave and was higher at fast-rise pulse that of the copper rod. Also, impedance as ages showed no difference for the 8 months. From the results, it is likely that ground performance for both electrodes shows no difference against commercial frequency and lighting impulse current, while the copper rod shows better performance against fast-rise pulse with rise-time of a few hundred ns.

In this study, we have investigated the effects of Mn and Co co-doping on defects, J-E curves and grain boundary characteristics of ZnO-Bi2O3 (ZB) varistor. Admittance spectra and dielectric functions show two bulk defects of Zn ·· (0.17∼0.18 eV) and V· (0.30∼0.33 eV). From J-E characteristics the nonlinear coefficient (α) and resistivity (ρgb) of pre-breakdown region decreased as 30 to 24 and 5.1 to 0.08 GΩcm with sintering temperature, respectively. The double Schottky barrier of grain boundaries in ZB(MCo) (ZnO-Bi2O3-Mn3O4-Co3O4) could be electrochemically single type. However, its thermal stability was slightly disturbed by ambient oxygen because the apparent activation energy of grain boundaries was changed from 0.64 eV at lower temperature to 1.06 eV at higher temperature. It was revealed that a co-doping of Mn and Co in ZB reduced the heterogeneity of the barrier in grain boundaries and stabilized the barrier against an ambient temperature (α-factor= 0.136).

This study focused on the performance characteristics of solar cell using the impedance technique. We measured an impedance according to frequency from 1 Hz until 1 MHz. It could know that the impedance was decreased according to the frequency increases in solar cell. The impedance of single crystal solar cell was 0.61 Ω at 1 Hz, and kept almost settled value to 1×10(2) Hz. However, the impedance of polycrystal solar cell was 7×10(3) Ω at 1 Hz.

In this study we aims to evaluate the effects of 1/3 mol% Co3O4 addition on the reaction, microstructure development, resultant electrical properties, and especially the bulk trap and grain boundary properties of ZnO-Bi2O3-Sb2O3 (Sb/Bi=2.0, 1.0, and 0.5) system (ZBS). The samples were prepared by conventional ceramic process, and characterized by XRD, density, SEM, I-V, impedance and modulus spectroscopy (IS & MS) measurement. In addition of Co3O4 in ZnO-Bi2O3-Sb2O3 (ZBSCo), the phase development, density, and microstructure were controlled by Sb/Bi ratio. Pyrochlore on cooling was reproduced in all systems. The more homogeneous microstructure was obtained in ZBSCo (Sb/Bi=1.0) system. In ZBSCo, the varistor characteristics were improved drastically (non-linear coefficient α=23∼50) compared to ZBS. Doping of Co3O4 to ZBS seemed to form V*o (0.33 eV) as dominant defect. From IS & MS, especially the grain boundary of Sb/Bi=0.5 system is composed of electrically single barrier (0.93 eV) and somewhat sensitive to ambient oxygen with temperature.

The sintering, defect and grain boundary characteristics of Bi-based ZnO chip varistor (1,608 mm size) have been investigated to know the possibility of lowering a manufacturing price by using 100 % Ag inner-electrode. The samples were prepared by general multilayer chip varistor process and characterized by shrinkage, SEM, current-voltage (I-V), admittance spectroscopy (AS), impedance and modulus spectroscopy (IS & MS) measurement. There are no problems to make a chip varistor with 100% Ag inner-electrode in the sintering temperature range of 850∼900℃ for 1 h in air. A good varistor characteristics (Vn= 9.3∼15.4 V, a= 23∼24, IL= 1.0∼1.6 μA) were revealed but formed Zn(i)·· (0.209 eV) as dominant defect, and increased the distributional inhomogeneity and the temperature instability in grain boundary barriers.

Recently, annual usage of energy is dramatically increasing because industrialization is going faster and more electricity is needed due to various electronic devices. This study focused on the performance characteristics of solar cell using the impedance technique. The experiment measured an impedance according to frequency`s from 2 mHz until 1 MHz. It could know that the impedance was decreased according to the frequency increases in solar cell. The imaginary part was changed from capacitance component to inductance component.

This paper was investigated the electrical properties for optimal operating conditions of monocrystalline silicon solar cell. The output of electricity for monocrystalline solar cell was investigated according to the distances between solar cell and halogen lamp and to the resistances by the variable resistor.

Dielectric Barrier Discharge (DBD) reactor with sinsodual AC type of power supply is very widely adopted for its compact size and effective discharging mechanism to generate high density of ozone radicals. However, at the aspect of design on power supply, its optimal switching conditions and topology is achieved by empirical test. Therefore, throughout this paper, it is proposed a design method of DBD power supply to guarantee a maximum ozone yield rate in accordance with DBD reactor modification and impedance variation when rapid gas discharging in the DBD reactor is proceeded.

In this study we aims to examine the effects of 0.5 mol% Cr2O3 addition on the reaction, microstructure development, resultant electrical properties, and especially the bulk trap and interface state levels of ZnO-Bi2O3-Sb2O3 (Sb/Bi=0.5, 1.0, and 2.0) systems (ZBS). The samples were prepared by conventional ceramic process, and characterized by XRD, density, SEM, I-V, impedance and modulus spectroscopy (IS & MS) measurement. The sintering and electrical properties of Cr-doped ZBS (ZBSCr) systems were controlled by Sb/Bi ratio. Pyrochlore (Zn2Bi3Sb3O14) was decomposed more than 100℃ lowered on heating in ZBS (Sb/Bi=1.0) by Cr doping. The densification of ZBSCr (Sb/Bi=0.5) system was retarded to 800℃ by unknown Bi-rich phase produced at 700℃. Pyrochlore on cooling was reproduced in all systems. And Zn7Sb2O12 spinel (α-polymorph) and δ-Bi(2)O(3) phase were formed by Cr doping. In ZBSCr, the varistor characteristics were not improved drastically (non-linear coefficient α=7~12) and independent on microstructure according to Sb/Bi ratio. Doping of Cr2O3 to ZBS seemed to form Zn(i) (0.16 eV) and Vo (0.33 eV) as dominant defects. From IS & MS, especially the grain boundaries of Sb/Bi=0.5 systems were divided into two types, i.e. sensitive to oxygen and thus electrically active one (1.1 eV) and electrically inactive intergranular one (0.95 eV) with temperature.

The basic performance of the ground system is evaluated as the ground resistance by applying low frequency current below 1 kHz. However, characteristics of the ground system should be analyzed by high frequency current up to 1 MHz since transient currents having a few hundred kHz component flow during a line-to-ground fault and/or a lightning strike. This paper deals with the design and fabrication of a wideband ground impedance meter (WGIM) which measures the impedance of ground systems in ranges from 65 Hz to 1.28 MHz. Also, a noise elimination algorithm using a digital bandpass filter is proposed. The maximum error of the WGIM is 4.91% in the measurement frequency range.