Dye-sensitized solar cells (DSSCs) suffer from efficiency limitations due to interfacial charge recombination at the TiO₂/dye/electrolyte interface. In this study, aminopropyltrimethoxysilane (APS) was introduced onto nanoporous TiO₂ photoelectrodes via a dip-coating process with controlled coating times to investigate the effect of silanization time on interfacial charge transport behavior. Unlike concentration-driven structural modification, this work focuses on the evolution of the APS-modified interface governed by reaction time. The DSSC with 30 min APS treatment exhibited the highest power conversion efficiency of 5.34%, representing a 19% enhancement compared to the untreated device (4.49%), mainly due to increased short-circuit current density and open-circuit voltage. However, prolonged coating times (2 h and 24 h) resulted in a significant decrease in photocurrent density, leading to reduced device performance despite partial improvement in recombination resistance. These results are attributed to the time-dependent evolution of the APS interfacial layer. At moderate coating time, APS provides effective surface functionalization, enhancing dye adsorption and suppressing interfacial recombination. In contrast, prolonged coating is expected to induce increased surface coverage and silane condensation, which can hinder electron injection and increase charge transport resistance. Therefore, the photovoltaic performance is governed by a trade-off between recombination suppression and charge injection efficiency, controlled by the silanization time. This study highlights the critical role of interfacial reaction kinetics in determining charge transport behavior and provides an effective strategy for optimizing DSSC performance through time-dependent interface engineering.

This study proposes an optimization strategy for the over-current protection (OCP) parameters of a lithium iron phosphate (LiFePO₄, LFP) battery system used in electric golf carts operating under high motor-load conditions. Real-world hillclimbing tests were conducted under four clearly defined payload/passenger conditions to analyze the transient discharge-current pro-file, voltage sag, and cell-temperature response. The maximum discharge current reached -238.2 A under the 200 kg cargopayload and one-passenger condition, and the current interval exceeding 150 A lasted up to 27 s. The maximum instantaneous power was 11.05 kW. Thermal analysis showed that the cell-temperature rise was within 2°C and the maximum measured cell temperature was 22.3°C. Linear regression of voltage and current yielded R² = 0.9368 and dV/dI = 0.0126 Ω, which was used as the DC internalresistance estimate. Based on these quantitative results and the cell specification limit of 300 A continuous discharge, the OCP threshold was reviewed from 250 A to 280 A to improve driving continuity while remaining below the allowable continuous-discharge current. EIS-based SOH estimation and the AI-BMS variable protection logic are presented as an extension framework for reflecting temperature and aging effects in future OCP-setting decisions.

GaN nanowire (NW)-based hybrid structures have attracted attention for optoelectronic applications due to their high surface area and efficient carrier transport. However, the optical transparency of GaN NWs is often limited by unintended residual species accumulated on the surface and in the inter-wire regions, as well as defect-related absorption, leading to reduced light transmission. In this work, we demonstrate that thermal annealing significantly improves the optical transparency of GaN NWs grown on indium tin oxide (ITO)/glass substrates. The transmittance increased from 47.9% to 78.5% at 550 nm after rapid thermal annealing at 800^oC for 3 min, while a comparable value (~75.5%) was achieved at 600^oC for 5 min. PbBr₃ was deposited onto the GaN NWs to form hybrid structures, and temperature-dependent photoluminescence (TDPL) measurements revealed enhanced emission stability with suppressed peak shift and reduced spectral broadening. Arrhenius analysis based on a two-channel model revealed that the activation energy of the dominant non-radiative recombination pathway increased from 62 meV in the as-grown sample to 85 meV after thermal annealing, while its relative contribution remained nearly unchanged. In contrast, the shallow trap-assisted pathway exhibited a similar activation energy of approximately 6 meV in both samples, but its contribution decreased from 0.35 to 0.17 after annealing. As a result, the internal quantum efficiency (IQE) improved from 75.9% to 87.4%. These results show that thermal annealing improves optical transparency by removing residuals and suppresses defect-related recombination, leading to enhanced carrier dynamics and improved optical performance of PbBr₃-based hybrid structures.

This paper proposes a circular sequential lighting control method to reduce current imbalance and luminance deviation among multiple LED modules in AC-powered LED lighting systems. Conventional fixed-sequence lighting control repeatedly prioritizes the same LED modules in every rectified voltage cycle, which leads to unequal current distribution, luminance non-uniformity, and the accelerated degradation of specific modules during long-term operation. To address these limitations, a circular sequential lighting strategy is introduced, in which the lighting order is cyclically rotated at every rectified cycle, ensuring that all LED modules experience equal lighting opportunities. A prototype AC-LED lighting system consisting of four series-connected LED modules was implemented and experimentally evaluated. The results demonstrate that, while the conventional fixed-sequence method produces a maximum average current deviation of up to 1.6 mA among modules, the proposed method equalizes the average current across all modules to approximately 17.1 mA. Furthermore, the flicker index remains at 0.13, which is comparable to that of the conventional method, indicating that luminance uniformity is improved without degradation of optical performance. The proposed circular sequential lighting control effectively distributes electrical stress, enhances luminance uniformity, and improves long-term reliability, making it a practical and efficient solution for high-quality AC-LED lighting applications.

β-Ga₂O₃ is an ultra-wide bandgap semiconductor promising for high-power electronic applications; however, heteroepitaxial growth on sapphire is challenging lattice and symmetry mismatch. In this study, β-Ga₂O₃ thin films were grown on C-plane sapphire substrates with various off-axis angles (0–12°) using mist-CVD, and the influence of substrate miscut on structural and optical properties was investigated. All films grown at 900°C exhibited (-201) oriented β phase. The crystal quality was strongly dependent on the off-axis angle, with intermediate off-axis angles (Δ_a = 6–8°) showing the narrowest rocking curve width. Off-axis substrates promoted step-aligned growth behavior compared to on-axis growth. Optical measurements revealed enhanced transmittance and wider bandgap values (4.92–4.95 eV) for off-axis samples compared to the on-axis film (4.69 eV). The findings provide practical guidelines for optimizing heteroepitaxial β-Ga₂O₃ growth on low-cost sapphire substrates for high-performance device applications.

Lead-free bismuth sodium titanate (BNT)-based ceramics have attracted strong attention as environmentally benign dielectric materials for high-efficiency electrostatic energy-storage capacitors. A key challenge is that pristine BNT typically exhibits large hysteresis, high remnant polarization, and limited dielectric reliability, which restrict recoverable energy storage and efficiency under practical electric fields. Here, we present a focused mini-review of recent studies to clarify how composition design, phase boundary tuning, defect chemistry, and microstructural control collectively enable slim or pinched polarization-electric field (P-E) behavior and improved energy-storage functionality in BNT-related bulk ceramics. The reviewed outcomes consistently show that stabilizing relaxor states governed by polar nanoregions (PNRs), often via solid-solution engineering and secondary relaxor/antiferroelectric-like incorporation, suppresses irreversible switching and reduces hysteresis loss, while densification and grain-size control enhance electrical homogeneity and breakdown strength. In addition, defect-mediated tuning of oxygen vacancy-related complexes is highlighted as an independent lever to control relaxor ergodicity and polarization reversibility, providing a complementary route to slim-loop optimization. These insights are expected to guide integrated design strategies that couple phase/relaxor-state engineering with defect and microstructure optimization, accelerating the development of reliable, temperature-robust, lead-free dielectric capacitors based on BNT-related ceramics.

Long lifetime, low power consumption, and environmental friendliness have enabled light-emitting diode (LED) lighting to rapidly replace conventional light sources such as incandescent and fluorescent lamps. In particular, AC-LED lighting systems can be directly powered by commercial alternating current (AC) sources; however, they suffer from significant luminance deviation caused by uneven current distribution among LED light-emitting modules. This paper proposes a lighting control method that improves flicker performance while maintaining lamp brightness and effectively reduces luminance deviation in AC-LED lighting. The proposed method reduces luminance deviation by controlling the lighting order of multiple LED light-emitting modules. Among four LED modules, only the required number of modules is continuously turned on, and the lighting priority alternates between rectification cycles. Specifically, during odd rectification cycles, LED modules are activated sequentially in ascending order (11→12→13→14), whereas during even rectification cycles, they are activated in descending order (14→13→12→11). By alternately applying continuous lighting control with opposite activation orders, the proposed reverse alternating lighting control method equalizes the current distribution among LED modules. As a result, luminance uniformity is improved, electrical stress concentration on specific modules is reduced, and the operational lifetime of the LED modules is extended compared with the conventional fixed-sequence lighting control method.

Neuromorphic computing, which mimics the energy-efficient parallel processing capabilities of the human brain, has emerged as an alternative to traditional von Neumann architectures that struggle with high power consumption in the era of artificial intelligence (AI). Despite the potential of Si-based neuromorphic chips, they often face fundamental limitations in integration density and biological compatibility, necessitating the development of next-generation devices that can better emulate the ionic signaling of biological systems. This review provides a comprehensive analysis of the recent research trends in artificial synapses and neurons based on organic electrochemical transistors (OECTs), highlighting their unique ability to achieve high transconductance and mixed ionic-electronic conduction at ultra-low operating voltages. We discuss how OECTs successfully replicate diverse synaptic plasticities and complex neuronal spiking behaviors through advanced material engineering and structural optimizations such as vertical architectures. Furthermore, this review discusses the implementation of high-order neural functions, including associative learning and logic operations, which are facilitated by the inherent electrochemical dynamics of organic semiconductors. Finally, overcoming current challenges in reliability and scalability will establish OECTs as a pivotal platform for low-power neuromorphic hardware and bio-integrated electronics.

This review introduces Corning’s Ribbon Ceramic process and the broader idea of ribbon ceramics―continuous, ultra-thin ceramic sheets made by tape or slot-die casting and fast, continuous sintering―covering key materials such as Al₂O₃, YSZ/ScSZ, PZT, LLZO, and LCO. Motivated by the need for scalable, energy-efficient ceramic components for electrification (green-hydrogen SOECs), next-generation Li-metal batteries, and compact piezo devices, we summarize capabilities and use cases using only publicly available information. Our main contribution is a clear platform view: continuous roll-to-roll conveyance with minutes-scale firing produces fully dense, fine-grained, high-purity ceramics at ~10-100 μm thickness with smooth native surfaces and controlled shapes, delivered as long rolls (up to ~300 ft), panels (~100 mm wide), or narrow strips (~0.5 mm). Illustrative results include 20-40 μm 3YSZ electrolytes for SOECs (high oxygen-ion conductance, ~1 GPa bend strength), LLZO garnet separators that cycle at 25℃ with interlayers, and free-standing LCO cathode ribbons tunable from dense to ~30% porous. For piezo acoustics, 60-80 μm PZT sheets (d33 ~300 pC/N) enable fine metallization and on-screen speakers, while fast firing reduces volatile loss and yields smaller grains. Together, these advances point to high-volume, lower-footprint manufacturing and faster adoption of novel ceramic membranes and substrates in SOEC/green-hydrogen systems, solid-state or hybrid lithium batteries, RF/power electronics, and piezo applications.

Bismuth layer-structured ferroelectrics with high Curie temperatures have recently attracted significant attention as promising candidates for high-temperature piezoelectric applications. However, the conventional solid-state reaction method entails high-temperature processing that induces bismuth volatilization, thereby degrading device reliability. In this study, we employed a co-precipitation method enabling atomic-level mixing to significantly lower the synthesis temperature of Nb/Tadoped Bi₄Ti₃O₁₂ ceramics compared to the solid-state reaction method. Experimental results demonstrated that the coprecipitation method yielded a pure single phase at 600℃ without intermediate phases. Furthermore, the synthesized nanopowders, with an average size of 100 nm, lowered the onset temperature of sintering shrinkage to 650℃, approximately 200℃ lower than that of the solid-state counterpart. The low-temperature synthesis process proposed in this work is expected to contribute to the performance enhancement of high-temperature piezoelectric devices by effectively suppressing bismuth volatilization and ensuring compositional stability.

This review systematically examines the structural characteristics, compositional design strategies, and recent research trends of layered double hydroxides (LDHs), which are recognized as promising electrocatalyst materials in electrochemical nitrate-to-ammonia conversion. Despite the rapid growth in related research, achieving simultaneous high selectivity and efficiency remains a significant technical challenge due to the complex mechanisms of the nitrate reduction reaction (NitRR) and its inherent competition with the hydrogen evolution reaction (HER). In this study, we analyzed the structural contributions of LDH catalysts for maximizing nitrate reduction efficiency and systematically established key catalyst design indicators required to ensure optimal performance. Specifically, we provide a detailed investigation of the physicochemical mechanisms for enhancing NH₃ production by precisely regulating the adsorption energies of reaction intermediates and maximizing charge transfer efficiency through compositional control and defect engineering. Furthermore, we discuss advanced structural design strategies, such as core-shell tandem structures, MOF-derived architectures, and interlayer anion control, as effective methods for enhancing catalytic performance and optimizing mass transport processes. These insights offer a strategic roadmap for designing high-performance LDH catalysts and represent a critical step toward the practical implementation of sustainable green ammonia production systems, particularly for integration into high-efficiency membrane electrode assembly (MEA) technologies.

Silicon carbide (SiC) MOSFETs provide superior performance compared to traditional silicon devices under hightemperature and high-power conditions, making them particularly valuable for power electronics applications requiring highfrequency switching and high-energy efficiency. As the electric vehicle (EV) market expands, these devices are commonly packaged into six-pack modules, which can show their different electrical characteristics between the bare-die device and the package due to packaging that improves heat dissipation and other properties. This study uses bare-die SiC MOSFETs to explore their intrinsic characteristics and evaluate their performance in a half-bridge configuration. A half-bridge circuit was constructed, and performance was assessed by varying driving frequencies (10 kHz and 50 kHz) and adjusting the duty cycle between 20% and 80%. Analysis revealed that, at a fixed switching frequency, the average output voltage and average output current are proportional to the duty cycle.

The increasing global demand for renewable energy has accelerated the deployment of offshore wind farms, thereby highlighting the need for advanced development and performance assessment techniques for dynamic submarine cables used in floating offshore wind systems. These cables are continuously subjected to combined thermal, electrical, and mechanical stresses, with mechanical loading playing a particularly dominant role. As a result, dynamic submarine cables exhibit degradation behaviors that differ significantly from those of conventional fixed submarine cables. This paper presents the design and implementation of a comprehensive evaluation system capable of applying combined thermal, electrical, and mechanical stresses to dynamic submarine cables. The system was validated using a 66 kV wet type submarine cable through commissioning tests and insulation performance measurements. Electrical stress of 72 kV, thermal stress exceeding 95°C, and mechanical stress corresponding to a bending radius of 20 times the cable diameter over 20 cycles were applied to verify system reliability. The subsequent insulation assessments quantitatively confirmed performance variations induced by the combined stresses. The results demonstrate that the proposed platform is the first system capable of simultaneously applying thermal, electrical, and mechanical stresses to dynamic submarine cables, and its operational performance has been successfully validated. This platform enables realistic reliability evaluation of dynamic cables used in floating offshore wind farms and is expected to improve the overall operational reliability of offshore wind power systems.

The rapid proliferation of artificial intelligence (AI) servers and high-performance computing systems has significantly elevated the technical and reliability requirements for multilayer ceramic capacitors (MLCCs). In such systems, MLCCs are critical passive components that must deliver high capacitance, fast transient response, and robust insulation performance under high temperature, voltage, and current density. This review examines the material, structural, and process innovations that underpin MLCC performance in AI applications. Key topics include the development of ultrathin dielectric layers (<0.5 μm), rare-earth doped BaTiO₃-based dielectrics with enhanced DC bias stability, and core-shell microstructures designed for temperature and field resilience. The paper also explores insulation degradation mechanisms―such as vacancydriven conduction and demixing―and advanced reliability assessment methodologies, including HALT, TSDC, and the tipping point framework. Comparisons with automotive-grade MLCCs highlight the unique requirements of AI systems, such as ultraminiaturization, high volumetric efficiency, and ppm-level field failure rates. Finally, the review discusses emerging trends in MLCC technology, including particle engineering, interface stabilization, and advanced lamination techniques, and provides insight into the future direction of capacitor development tailored to AI data center environments.

The quench behavior of wires for superconducting fault current limiters at DC faults was simulated, with a focus on the effect of capacitor discharge on the quench. The behavior was also expressed in mathematical forms to facilitate a better understanding of the simulation results and for rough analytical estimations of the wire length suitable for the circuit voltage and capacitance. The quench resistance development behavior for various wire lengths and circuit capacitances was simulated using the model developed in the previous work. The quench behavior was expressed in mathematical forms, reflecting the concept of heat balance. During the quench, the wire temperature increased more slowly for longer wires, but was found to increase in a similar pattern. The wire length estimated by the mathematical formula was close to the one obtained by the simulation, with an error range of a few %. The calculations will be used to estimate effectively the length of wires needed to build superconducting fault current limiters for applications in DC power systems.

Humidity monitoring of exhaled breath has emerged as a vital approach for noninvasive respiratory health assessment, underscoring the need for sensitive and reliable humidity sensors. Despite its high conductivity and hydrophilic functional groups, reduced graphene oxide (rGO) often undergoes irreversible moisture adsorption and gradual oxidation by residual water, resulting in sensitivity degradation and long-term instability during cycling. In this study, a montmorillonite/reduced graphene oxide (MMT/rGO) composite is developed as a room-temperature humidity-sensing material, exhibiting an optimized response of 115%, more than 14 times higher than that of pristine rGO. This superior performance originates from the synergistic interaction between the reversible MMT swelling and the conductive rGO network near the electrical percolation transition, which ensures excellent stability and repeatability under repeated humidity cycles. These findings suggest that the MMT/rGO composite provides a cost-effective and biocompatible platform for next-generation wearable humidity sensors capable of continuous respiratory monitoring.

The growing demand for thinner, lighter, and more energy-efficient electronic systems has driven the development of acoustic technologies toward compact and flexible sound generation platforms. Despite significant progress, conventional electromagnetic speakers remain limited by bulky structures, energy losses, and poor compatibility with modern ultrathin devices. In this review, recent advancements in piezoelectric acoustic systems are presented, demonstrating a new generation of speakers capable of producing high-fidelity sound from ultra-slim, lightweight, and mechanically compliant designs. Through refined structural configurations and efficient electromechanical coupling, these piezoelectric exciters achieve strong acoustic output, fast response, and wide frequency operation while drastically reducing component thickness. These exciters also show their suitability for seamless integration into flexible displays, wearable devices, and automotive panels, offering enhanced spatial audio practicality and multifunctional operation, including demonstrative output and sensing. This advancement marks a step toward the convergence of acoustic, haptic, and interactive technologies, for the realization of sustainable and immersive humanmachine interfaces in future electronic and automotive systems.

Perovskite light-emitting diodes (PELEDs) are emerging as promising candidates for next-generation displays, thanks to their narrow full width at half maximum and low-cost solution processing capabilities. Blue PeLEDs are essential for achieving a full-color gamut; however, efficiency and stability challenges limit their practical use. A primary bottleneck arises from interfacial issues between the perovskite emissive and charge transport layers. This review summarizes the key interfacial challenges hindering the performance of blue PeLEDs and highlights recent advances in interfacial engineering strategies. By focusing on interfacial engineering between the hole-transport layer and perovskite, this review compares different strategies and outlines future directions for developing high-performance blue light-emitting devices.

Micro-LEDs, which have a chip size of less than 100 × 100 μm², have been potential candidates for conventional LCDs and OLEDs due to their high optical power, outstanding stability, and nanosecond response time. However, Micro-LED chips are fabricated only on limited substrates due to the high-temperature metal-organic chemical vapor deposition process and lattice-mismatch issues. Therefore, the fabrication of Micro-LED displays requires complex processes such as chip fabrication, transfer, bonding, and repair. Especially, Micro-LED transfer and bonding have been critical challenges for the Micro-LED display commercialization. Here, recent advances in the transfer and bonding of Micro-LEDs are introduced, and novel Micro- LED display fabrication methods are reviewed to provide a practical outlook for both mass production and commercialization of Micro-LED displays.

Ceramic thin plates are widely utilized in various advanced technologies, such as fuel cells and heat dissipation substrates, due to their high mechanical strength and thermal conductivity. However, the trend of thinning ceramic plates increases warpage, which can critically affect product quality and reliability. Therefore, understanding and accurately measuring this warpage has become increasingly important. In this study, a non-contact measurement method, the light sectioning technique, was applied to measure the warpage of thin ceramic plates with a half-cell (anode/electrolyte) structure for solid oxide fuel cells (SOFC) by varying their area and thickness. The relationship between the physical properties of the thin plates and the warpage was analyzed. Additionally, a comparative analysis was conducted to evaluate warpage errors caused by compressive loads during the traditional contact measurement process. Finally, to verify the reliability of the non-contact measurement method, four types of non-contact measurement techniques - light sectioning technique, laser displacement measurement, optical confocal technique, and white-light interferometry technique - were used to compare warpage data by orientation. The results were also compared with those from contact measurement methods to analyze the average warpage values. Through this, the superiority and high reliability of the non-contact measurement method were demonstrated.

κ-phase Ga₂O₃ is a wide-bandgap semiconductor that has attracted attention for power and optoelectronic device applications. However, its crystal quality and optical properties are highly dependent on the growth temperature, which motivates the need for a systematic study. In this work, κ-Ga₂O₃ thin films were grown on AlN/sapphire templates using mist-CVD at different temperatures. At lower temperatures (400℃), films exhibited incomplete crystallization and partial opacity, whereas higher growth temperatures (500-700℃) produced transparent films with improved properties. The bandgap was found to increase with temperature, consistent with reported values for 600-700℃, and XRD/XRC analysis confirmed that crystal quality improved with higher growth temperature. AFM analysis further revealed reductions in surface roughness and grain size variation at elevated temperatures. These findings indicate that an optimal growth window of 600-700℃ enables high-quality κ-Ga₂O₃ films, with potential implications for integrating this material on other hexagonal substrates such as SiC and GaN.

Silicon carbide (SiC) power devices are attracting increasing attention for high-voltage and high-efficiency applications due to their superior material properties. However, achieving an optimal trade-off between specific on-resistance (Ron,sp) and breakdown voltage (BV) remains a key design challenge in planar MOSFET structures. In this study, twodimensional TCAD simulations were conducted to investigate the impact of varying the doping concentrations of the P-well (from 3 × 10¹⁷ to 6 × 10¹⁷ cm^-3) and JFET regions (from 1 × 10¹⁶ to 7 × 1016 cm^-3) on the electrical characteristics of 2.4 kVclass planar SiC MOSFETs. To maintain comparable BV conditions for 2.4 kV operation, two groups with P-well doping concentrations of 4.5 × 10¹⁷ cm^-3 and 5.3 × 1017 cm^-3 were analyzed and compared. When the P-well and JFET doping concentrations were 4.5 × 10¹⁷ cm^-3 and 1.5 × 10¹⁶ cm^-3, respectively, the simulated Ron,sp and BV were 1.41 mΩ·cm² and 3,150 V. In contrast, with P-well and JFET doping concentrations of 5.3 × 10¹⁷ cm^-3 and 5.0 × 10¹⁶ cm^-3, the Ron,sp was reduced to 1.31 mΩ·cm² while the BV slightly increased to 3,200 V. Based on these results, an optimized device structure was proposed, demonstrating its potential for integration into high-voltage SiC-based power systems. This study provides practical design insights and is expected to contribute to the advancement of wide bandgap semiconductor technologies for next-generation power electronics.

Quantum dots (QDs) offer size-dependent tunability across the infrared to ultraviolet range with narrow emission linewidths and high color purity, making them highly attractive for next-generation light-emitting devices. Quantum dot lightemitting diodes (QLEDs) further combine precise spectral control with scalable, low-cost solution processing, positioning them as strong candidates for wearable, stretchable, and AR/VR display technologies. However, conventional single-emission QLEDs suffer from charge imbalance, efficiency roll-off, and limited operational lifetime, necessitating new device architectures. Tandem QLEDs, which vertically stack multiple emissive layers (EMLs) connected by charge generation layers (CGLs), provide a compelling solution by enabling higher luminance, improved charge balance, and longer lifetime at equivalent current density. The CGL serves as the interfacial region mediating charge injection and generation between adjacent EMLs, directly determining device efficiency and stability. This review highlights recent progress in CGL engineering, categorizing representative designs into planar heterojunction, inorganic-based, and dipole-based configurations. Comparative analysis of their formation mechanisms, material systems, and process compatibilities reveals evolving charge-control strategies that extend beyond material selection. These insights establish design principles for next-generation tandem QLEDs with enhanced efficiency, durability, and manufacturability.

To ensure the long-term reliability of flexible photovoltaic (FPV) modules, it is crucial to develop an effective moisture barrier layer that prevents the infiltration of moisture and oxygen. We developed such a layer composed of parylene (700 nm) and AlOx (70 nm), optimizing its material properties, moisture-blocking performance, and processing conditions. The barrier layer applied to the Ethylene Tetrafluoroethylene (ETFE) substrate demonstrated a water vapor transmission rate (WVTR) of 6.33 × 10^-2 g/m²/day and an average visible light transmittance (AVT) of 85.3% over the 380-780 nm wavelength range. For the FPV module with this barrier, Damp/Heat (DH) reliability testing was conducted at 85℃ and 85% relative humidity for up to 1,000 hours. During testing, the power conversion efficiency (PCE) decreased slightly from 25.4% (0 hr) to 24.7% (1,000 hr), reflecting a minimal reduction of only 0.7%. The primary cause of degradation was identified as a -4% relative change in shortcircuit current density (JSC) before and after DH testing. Consequently, the ETFE/parylene/AlOx multilayer moisture barrier proved highly effective in ensuring the long-term reliability of solar modules.

Multilayer ceramic capacitors (MLCCs) are essential for high-capacitance, miniaturized, and reliable electronic applications. This study examines the impact of layer stacking on the dielectric and electrical properties of MLCCs using a BaTiO₃-based dielectric with MgO, Mn₃O₄, Yb₂O₃, V₂O₅, and (BaCa)SiO₃ glass additives. MLCCs with 10 um-thick dielectric layers and varying Ni electrode layers (10, 30, 50, and 100 layers) were fabricated. The dielectric constant increases significantly up to 30 layers due to compressive stress and sintering densification but it becomes linear beyond 30 layers. Dissipation factor and ESR decrease with higher stacking due to improved sinterability, while breakdown voltage declines exponentially from defect accumulation and thermal stress. Insulation resistance decreases but stabilizes relative to capacitance. C-V results show stress-induced polarization suppression, which reduces the dielectric constant under high voltage. Optimized stacking and sintering conditions are crucial for MIL-PRF-32535 compliant MLCC designs.

NTC (negative temperature coefficient) thermistors are semiconductor ceramics whose resistance decreases with increasing temperature, making them essential components in various temperature sensing applications. Typically, ceramic materials are sintered at high temperatures exceeding 1,150°C. However, in laminated devices incorporating internal electrodes, co-sintering can lead to cracking and mechanical failure due to mismatches in the thermal expansion coefficients between the ceramic layers and metal-based electrodes. Moreover, the use of noble metal electrodes increases production costs. To address these challenges, a low-temperature sintering approach is required. Previous studies have demonstrated that incorporating glass frit can reduce the sintering temperature of ceramics, although this often results in increased electrical resistance. In this study, NiMnCoO₄ (NMC) ceramics, as a representative NTC thermistor composition, were prepared with the addition of 10 wt% glass frit. To mitigate the resulting increase in resistivity, trace amounts (1 wt%) of various metal oxides, including CuO, ZnO, and MnO, were introduced. Among these, the addition of CuO notably decreased both the resistivity and B constant values. In contrast, MnO had little effect on resistivity, while ZnO led to an increase. With respect to the B25/85 constant, samples containing MnO and ZnO exhibited higher values than those without metal oxide additives. These findings indicate that the incorporation of 1 wt% CuO is effective in reducing the increased resistivity in NMC ceramics subjected to low-temperature sintering via glass frit addition.

Cathodoluminescence (CL) spectroscopy provides valuable insights into the optical and electronic properties of materials by analyzing photon emission induced by electron beam excitation. In this study, we present a novel CL detection system integrated into a transmission electron microscope (TEM) specimen stage, enabling high-resolution optical analysis of internal microstructures. The system features a parabolic mirror, a focusing lens, and a UV-VIS range optical fiber to maximize light collection and transmission efficiency, with performance further enhanced by a liquid nitrogen cooling setup. Using this system, we successfully performed CL mapping of InGaN/GaN multiple quantum wells (MQWs) and GaN thin films. The results revealed that threading dislocations act as non-radiative centers in GaN and locally increase the bandgap energy in InGaN MQWs, causing a blue-shift in CL emission. These findings support a model in which dislocations induce carrier delocalization, preserving high radiative efficiency despite high dislocation densities. This work demonstrates the effectiveness of the TEM-integrated CL system for nanoscale optical characterization, offering a new pathway for studying defect-related phenomena in semiconductor materials.

The thermal management issue in OLED (organic light emitting diode) devices has a significant impact on the efficiency, reliability, and life time of the device. In particular, in OLED systems with multipolar or double cathode electrodes, it is important to accurately interpret the effect of heat generated by current flow between electrodes on the emitting layer. In this study, the governing equation was established based on the heat conduction equation to mathematically model and analyze this heat distribution, and the heat distribution analysis was performed using the COMSOL program. It was confirmed that the temperature generated in the OLED with the double cathode structure reached a maximum of 343.157 K centered on the emitting layer. The heat distribution generated in the proposed OLED structure with the double cathode electrodes was confirmed to be highly distributed in the center toward the double cathode electrodes, which is believed to be because the arrangement of the double cathode electrodes improves the symmetrical distribution of temperature while reducing power consumption.

This study developed a dielectric composition for high-capacitance MLCCs with C0G and U2J temperature compensation characteristics (Class I) under reducing conditions. The potential application of this composition in highpermittivity class I MLCCs was examined. Using (Ba₀.₂₄Ca₀.₁₆Sr₀.₆)(TiₓZr₁₋ₓ)O₃. XRD analysis showed that secondary phases like Sr₂TiO₄ and TiO₂ formed at higher Ti content, affecting the stoichiometric balance. Adjusting the Ti/Zr molar ratio resulted in a dielectric constant of 41.2 ~ 105, a dielectric loss of 0.082 ~ 0.174%, and insulation resistance above 1.6 × 10¹³ ohms at 25℃. The TCC shifted from C0G to U2J as the Ti/Zr ratio increased, but the composition enabled the design of high-capacitance and high-voltage MLCCs with favorable dielectric and electrical properties.

NTC thermistors are essential components widely used for temperature sensing in various electronic sensor applications. However, conventional NTC thermistor ceramics typically require high sintering temperatures above 1150℃, necessitating the use of high-cost noble metal electrodes such as palladium (Pd) or platinum (Pt), which increases the overall manufacturing cost. In this study, low-melting-point oxides were successfully introduced as sintering aids to reduce the sintering temperature of NiMnCoO₄-based semiconducting ceramics. As the additive content increased, the B constant and average grain size exhibited an increasing trend, while the sample containing 5 wt% additives showed the lowest room-temperature resistivity. Furthermore, samples sintered at 1000℃ demonstrated slightly higher room-temperature resistivity and B constant values compared to those sintered at 1150℃. These results confirm that the addition of low-melting-point oxides is effective in lowering the sintering temperature of NiMnCoO₄ ceramics, suggesting the potential for reducing production costs and improving design flexibility in thermistor fabrication.