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Nonvolatile memory
WHERE t1.sid in(parameter_dbtbl_keyword '%Nonvolatile memory%') and t1.xml_status <> 99
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results for
"Nonvolatile memory"
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Keywords
Nonvolatile memory (3)
1×10(6) program/Erase cycles (1)
3 V single power supply (1)
Asymmetric programming (1)
Band gap engineered tunnel barrier (1)
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Publication year
2009 (1)
2006 (1)
2003 (1)
Authors
Won Ju Cho (1)
Byung Cheul Kim (1)
Kwang Yell Seo (1)
Keywords
Nonvolatile memory (3)
1×10(6) program/Erase cycles (1)
3 V single power supply (1)
Asymmetric programming (1)
Band gap engineered tunnel barrier (1)
Chalcogenide (1)
Ge1Se1Te2 (1)
Ge2Sb2Te5 (1)
Phase chnge memory device (1)
SiO2/Si3N4 (1)
SONOS (1)
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authors
Won Ju Cho (1)
Byung Cheul Kim (1)
Kwang Yell Seo (1)
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"Nonvolatile memory"
Study of Nonvolatile Memory Device with SiO2/Si3N4 Stacked Tunneling Oxide
Won Ju Cho
J Electr Electron Mater
2009;22(1):17-21.
Published online January 1, 2009
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Phase Change Properties of Amorphous Ge1Se1Te2 and Ge2Sb2Te5 Chalcogenide Thin Films
J Electr Electron Mater
2006;19(10):918-922.
Published online October 1, 2006
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The Improved Electrical Endurance(Program/Erase Cycles) Characteristics of SONOS Nonvolatile Memory Device
Byung Cheul Kim, Kwang Yell Seo
J Electr Electron Mater
2003;16(1):5-10.
Published online January 1, 2003
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