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Polycrystalline 3C-SiC
WHERE t1.sid in(parameter_dbtbl_keyword '%Polycrystalline 3C-SiC%') and t1.xml_status <> 99
5
results for
"Polycrystalline 3C-SiC"
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Keywords
Polycrystalline 3C-SiC (5)
Doubly clamped beam (2)
Resonator (2)
AIN buffer Layer (1)
Cantilever (1)
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Publication year
2009 (2)
2008 (1)
2007 (1)
2006 (1)
Authors
Gwiy Sang Chung (3)
Tae Won Lee (2)
Kang San Kim (1)
Keywords
Polycrystalline 3C-SiC (5)
Doubly clamped beam (2)
Resonator (2)
AIN buffer Layer (1)
Cantilever (1)
Contact resistivity (1)
DSB (1)
LPCVD (1)
MEMS (1)
Ohmic contact (1)
Raman scattering (1)
SiC-MEMS (1)
TiW (1)
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authors
Gwiy Sang Chung (3)
Tae Won Lee (2)
Kang San Kim (1)
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2008 (1)
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2006 (1)
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"Polycrystalline 3C-SiC"
Temperature Characteristics of Polycrystalline 3C-SiC Micro Resonators
Gwiy Sang Chung, Tae Won Lee
J Korean Inst Electr Electron Mater Eng
2009;22(4):314-317.
Published online April 1, 2009
DOI:
https://doi.org/10.4313/JKEM.2009.22.4.314
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Fabrication of Polycrystalline SiC Doubly Clamped Beam Micro Resonators and Their Characteristics
Gwiy Sang Chung, Tae Won Lee
J Korean Inst Electr Electron Mater Eng
2009;22(4):303-306.
Published online April 1, 2009
DOI:
https://doi.org/10.4313/JKEM.2009.22.4.303
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Raman Scattering Characteristics of Polycrystalline 3C-SiC Thin Films deposited on AIN Buffer Layer
Gwiy Sang Chung, Kang San Kim
J Korean Inst Electr Electron Mater Eng
2008;21(6):493-498.
Published online June 1, 2008
DOI:
https://doi.org/10.4313/JKEM.2008.21.6.493
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Effect of Surface Treatments of Polycrystalline 3C-SiC Thin Films on Ohmic Contact for Extreme Environment MEMS Applications
J Korean Inst Electr Electron Mater Eng
2007;20(3):234-239.
Published online March 1, 2007
DOI:
https://doi.org/10.4313/JKEM.2007.20.3.234
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Physical Characteristics of Polycrystalline 3C-SiC Thin Films Grown by LPCVD
J Korean Inst Electr Electron Mater Eng
2006;19(8):732-736.
Published online August 1, 2006
DOI:
https://doi.org/10.4313/JKEM.2006.19.8.732
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