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"RPCVD"

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"RPCVD"

Electrical Properties of SiGe HBTs designed with Bottom Collector and Single Metal Layer Structures
J Electr Electron Mater 2007;20(8):661-665.   Published online August 1, 2007
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RBS Analysis on the Si0.9Ge0.1 Epitaxial Layer for the Fabrication of SiGe HBT
J Electr Electron Mater 2004;17(9):916-923.   Published online September 1, 2004
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Fabrication and characterization of the SiGe HBTs using an RPCVD
J Electr Electron Mater 2004;17(8):823-829.   Published online August 1, 2004
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Low-Temperature Selective Epitaxial Growth of SiGe using a Cyclic Process of Deposition-and-Etching
Sang Hun Kim, Seung Yun Lee, Chan U Park, Gyu Hwan Sim, Jin Yeong Kang
J Electr Electron Mater 2003;16(8):657-662.   Published online August 1, 2003
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Selective Epitaxial Growth of Si and SiGe using Si-Ge-H-Cl System for Self-Aligned HBT Applications
Sang Hoon Kim, Chan Woo Park, Seung Yun Lee, Kyu Hwan Shim, Jin Young Kang
J Electr Electron Mater 2003;16(7):573-578.   Published online July 1, 2003
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