Journal of Electrical and Electronic Materials

Effect of Si3N4 Buffer Layer on Transmittance of TiO2/Si3N4/Ag/Si3N4/TiO2 Multi Layered Structure: Seo Hee Lee, Gun Eik Jang; J Korean Inst Electr Electron Mater Eng 2012;25(1):44-47. Published online January 1, 2012; DOI: https://doi.org/10.4313/JKEM.2012.25.1.44

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The TiO2/Si3N4/Ag/Si3N4/TiO2 multi layered structure was designed for the possible application of transparent electrodes in PDP (Plasma Display Panel). Multi layered film was deposited on a glass substrate at room temperature by DC/RF magnetron sputtering system and EMP (Essential Macleod Program) was adopted to optimize the optical characteristics of film. During the deposition process, the Ag layer in TiO2/Ag/TiO2 became heavily oxidized and the filter characteristic was degraded easily. In thus study, Si3N4 layer was used as a diffusion buffer layer between TiO2 and Ag. in order to prevent the oxidation of Ag layer in TiO2/Si3N4/Ag/Si3N4/TiO2 structure. It was confirmed that Si3N4 layer is one of candidate materials acting as diffusin barrier between TiO2/Ag/TiO2.

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Thin Films and Sensors : Application of Si3N4 Thin Film as a Humidity Protection Layer for Organic Light Emitting Diode: Chang Jo Kim, Paik Kyun Shin; J Korean Inst Electr Electron Mater Eng 2010;23(5):397-402. Published online May 1, 2010; DOI: https://doi.org/10.4313/JKEM.2010.23.5.397

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Optimization of a SiOx/SiNxOyCz multilayer structure for a reliable gas diffusion barrier via low-temperature plasma-enhanced atomic layer deposition
Ju-Hwan Han, Su Ho Lim, Jin-Myung Choi, Seong-Hyeon Lee, Woojin Jeon, Jin-Seong Park
Ceramics International.2019; 45(6): 7407. CrossRef