Journal of Electrical and Electronic Materials

Effect of Pad Thickness on Removal Rate and Within Wafer Non-Uniformity in Oxide CMP: Jae Hyun Bae, Hyun Seop Lee, Jae Hong Park, Hideaki Nishizawa, Masaharu Kinoshita, Hae Do Jeong; J Korean Inst Electr Electron Mater Eng 2010;23(5):358-363. Published online May 1, 2010; DOI: https://doi.org/10.4313/JKEM.2010.23.5.358

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Effects of CMP Retaining Ring Material on the Performance of Wafer Polishing
Ki-Won Park, Eun-young Kim, Dong-Sam Park
Journal of the Korean Society of Manufacturing Process Engineers.2020; 19(3): 22. CrossRef
Effects of Insert Materials of Retaining Ring on Polishing Finish in Oxide CMP
Ki-Won Park, Dong-Sam Park
Journal of the Korean Society of Manufacturing Process Engineers.2019; 18(8): 44. CrossRef
Finite Element Analysis on Dynamic Viscoelasticity of CMP Polishing Pad
Byeongjun Pak, Dasol Lee, Seonho Jeong, Hyunjin Kim, Haedo Jeong
Journal of the Korean Society for Precision Engineering.2019; 36(2): 177. CrossRef