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"Wettability"

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"Wettability"

Electrical Properties of Carbon-Based Hybrid Resistor Bonded with Carbon Nanotube Paste
Sunwoo Lee, Eun Min Kim
J Electr Electron Mater 2023;36(5):482-487.   Published online September 1, 2023
DOI: https://doi.org/10.4313/JKEM.2023.36.5.7
A carbon-based hybrid resistor was fabricated using carbon nanotube (CNT) paste as an adhesive layer to establish electrically continuous ohmic contacts between CNT sheets and different CNT sheet or copper based metal alloy plates, and its electrical properties were evaluated. CNT sheets were fabricated using vacuum filtration with a CNT solution dispersed in isopropyl alcohol (IPA) solvent. The electrical characteristics of these carbon-based hybrid resistors were investigated.The CNT paste fulfilled the requirements for forming ohmic contacts between CNT sheets and metal alloy plates, which was attributed to the lowest work function difference and excellent wettability at the interface.
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Effect of Native Oxide Layer on the Water Contact Angle to Determine the Surface Polarity of SiC Single Crystals
Jin Yong Park, Jung Gon Kim, Dae Sung Kim, Woo Sik Yoo, Won Jae Lee
J Electr Electron Mater 2020;33(3):245-248.   Published online May 1, 2020
DOI: https://doi.org/10.4313/JKEM.2021.33.3.15
The wettability of silicon carbide (SiC) crystal, which has 6H-SiC and 4H-SiC regions prepared using the physical vapor transport (PVT) method, is quantitatively analyzed using dispensed deionized (DI) water droplets. Regardless of the polytypes in SiC, the average of five contact angle measurements showed a difference of about 6° between the Si-face and C-face. The contact angle on the Si-face (C-face) is measured after the removal of the native oxide using BOE (6:1), and revealed a significant decrease of the contact angle from 74.9° (68.4°) to 47.7° (49.3°) and from 75.8° (70.2°) to 51.6° (49.5°) for the 4H-SiC and 6H-SiC regions, respectively. The contact angle of the Si-face recovered over time during room temperature oxidation in air; in contrast, that of the C-face did not recover to the initial value. This study shows that the contact angle is very sensitive to SiC surface polarity, specific surface conditions, and process time. Contact angle measurements are expected to be a rapid way of determining the surface polarity and wettability of SiC crystals.
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Tracking Resistance and Aging Characteristics of Epoxy Insulating Materials by the Rotating Wheel Dip Test
Han Goo Cho
J Electr Electron Mater 2008;21(6):530-537.   Published online June 1, 2008
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Stability and Improvement of Polishing Pad in W CMP
J Electr Electron Mater 2007;20(12):1027-1033.   Published online December 1, 2007
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Polishing Pad Analysis and Improvement to Control Performance
J Electr Electron Mater 2007;20(10):839-845.   Published online October 1, 2007
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