Skip to main navigation Skip to main content
  • KIEEME

J Electr Electron Mater : Journal of Electrical and Electronic Materials

OPEN ACCESS
ABOUT
BROWSE ARTICLES
EDITORIAL POLICIES
FOR CONTRIBUTORS

Short Channel 비휘발성 SNOSFET 기억소자의 제작과 특성

강창수

Fabrication and Characteristics of Short Channel Nonvolatile SNOSFET Memory Devices

Chang Soo Kang
J Korean Inst Electr Electron Mater Eng 1991;4(3):259-266.
  • 16 Views
  • 0 Download
  • 0 Crossref
  • 0 Scopus
prev next

Download Citation

Download a citation file in RIS format that can be imported by all major citation management software, including EndNote, ProCite, RefWorks, and Reference Manager.

Format:

Include:

Fabrication and Characteristics of Short Channel Nonvolatile SNOSFET Memory Devices
J Korean Inst Electr Electron Mater Eng. 1991;4(3):259-266.
Download Citation

Download a citation file in RIS format that can be imported by all major citation management software, including EndNote, ProCite, RefWorks, and Reference Manager.

Format:
Include:
Fabrication and Characteristics of Short Channel Nonvolatile SNOSFET Memory Devices
J Korean Inst Electr Electron Mater Eng. 1991;4(3):259-266.
Close