Surface characteristics of Si-doped In0.1Ga0.9As epilayers due to Si-cell temperature

Dong Lyeul Kim; Dong Yul Lee; In Ho Bae

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반도체 / Si 이 첨가된 In0.1Ga0.9As 에피층의 Si 셀 온도에 따른 표면특성 연구

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Surface characteristics of Si-doped In0.1Ga0.9As epilayers due to Si-cell temperature

Dong Lyeul Kim, Dong Yul Lee, In Ho Bae

J Electr Electron Mater 2000;13(7):551-556.
Published online: July 1, 2000

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Surface characteristics of Si-doped In0.1Ga0.9As epilayers due to Si-cell temperature

J Electr Electron Mater. 2000;13(7):551-556. Published online July 1, 2000

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Download a citation file in RIS format that can be imported by all major citation management software, including EndNote, ProCite, RefWorks, and Reference Manager.

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bib — For JabRef, BibDesk, and other BibTeX-specific software

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Surface characteristics of Si-doped In0.1Ga0.9As epilayers due to Si-cell temperature

J Electr Electron Mater. 2000;13(7):551-556. Published online July 1, 2000

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반도체 / Si 이 첨가된 In0.1Ga0.9As 에피층의 Si 셀 온도에 따른 표면특성 연구

Surface characteristics of Si-doped In0.1Ga0.9As epilayers due to Si-cell temperature

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