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반도체 / SADS ( Silicide As Diffusion Source ) 법으로 형성한 코발트 폴리사이트 게이트의 C-V 특성

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C-V Characteristics of Cobalt Polycide Gate formed by the SADS ( Silicide As Diffusion Source ) Method

Yeon Sil Jung, Kyoo Sik Bae
J Electr Electron Mater 2000;13(7):557-562.
Published online: July 1, 2000
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C-V Characteristics of Cobalt Polycide Gate formed by the SADS ( Silicide As Diffusion Source ) Method
J Electr Electron Mater. 2000;13(7):557-562.   Published online July 1, 2000
Download Citation

Download a citation file in RIS format that can be imported by all major citation management software, including EndNote, ProCite, RefWorks, and Reference Manager.

Format:
Include:
C-V Characteristics of Cobalt Polycide Gate formed by the SADS ( Silicide As Diffusion Source ) Method
J Electr Electron Mater. 2000;13(7):557-562.   Published online July 1, 2000
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