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반도체 / ECR 을 이용한 SF6/O2 가스 플라즈마에 의한 ITO 의 식각 특성 연구

권광호, 강승열, 김곤호, 염근영

Etch characteristics of ITO ( Indium Tin Oxide ) using SF6/O2 - gas ECR ( Electron Cyclotron Resonance ) Plasmas

Kwang Ho Kwon, Seung Youl Kang, Gon Ho Kim, Gon Young Yeom
J Electr Electron Mater 2000;13(7):563-567.
Published online: July 1, 2000
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Etch characteristics of ITO ( Indium Tin Oxide ) using SF6/O2 - gas ECR ( Electron Cyclotron Resonance ) Plasmas
J Electr Electron Mater. 2000;13(7):563-567.   Published online July 1, 2000
Download Citation

Download a citation file in RIS format that can be imported by all major citation management software, including EndNote, ProCite, RefWorks, and Reference Manager.
Format:
Include:
Etch characteristics of ITO ( Indium Tin Oxide ) using SF6/O2 - gas ECR ( Electron Cyclotron Resonance ) Plasmas
J Electr Electron Mater. 2000;13(7):563-567.   Published online July 1, 2000
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