Skip to main navigation Skip to main content
  • KIEEME

J Electr Electron Mater : Journal of Electrical and Electronic Materials

OPEN ACCESS
ABOUT
BROWSE ARTICLES
EDITORIAL POLICIES
FOR CONTRIBUTORS

Articles

AIGaN / GaN 이종접합 디바이스를 위한 GaN 에피층의 전기적 특성

문도성

Electrical Characteristics of GaN Epi Layer on Sapphire Substrates for AIGaN / GaN Heterostructures

Do Soung Moon
J Electr Electron Mater 2002;15(7):591-596.
Published online: July 1, 2002
  • 7 Views
  • 0 Download
  • 0 Crossref
  • 0 Scopus
prev next

Download Citation

Download a citation file in RIS format that can be imported by all major citation management software, including EndNote, ProCite, RefWorks, and Reference Manager.

Format:

Include:

Electrical Characteristics of GaN Epi Layer on Sapphire Substrates for AIGaN / GaN Heterostructures
J Electr Electron Mater. 2002;15(7):591-596.   Published online July 1, 2002
Download Citation

Download a citation file in RIS format that can be imported by all major citation management software, including EndNote, ProCite, RefWorks, and Reference Manager.

Format:
Include:
Electrical Characteristics of GaN Epi Layer on Sapphire Substrates for AIGaN / GaN Heterostructures
J Electr Electron Mater. 2002;15(7):591-596.   Published online July 1, 2002
Close