Single Crystal Silicon Thin Film Transistor using SOI Wafer for the Switching Device of Top Emission Type AMOLEDs

Jae Won Chang; Hoon Kim; Kyeong Sik Shin; Jai Kyeong Kim; Byeong Kwon Ju

doi:10.4313/JKEM.2003.16.4.292

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SOI 웨이퍼를 이용한 Top emission 방식 AMOLEDs의 스위칭 소자용 단결정 실리콘 트랜지스터

장재원, 김훈, 신경식, 김재경, 주병권

Single Crystal Silicon Thin Film Transistor using SOI Wafer for the Switching Device of Top Emission Type AMOLEDs

Jae Won Chang, Hoon Kim, Kyeong Sik Shin, Jai Kyeong Kim, Byeong Kwon Ju

J Korean Inst Electr Electron Mater Eng 2003;16(4):292-297.
Published online: April 1, 2003

DOI: https://doi.org/10.4313/JKEM.2003.16.4.292

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Keywords: SOI wafer, silicon on insulator, AMOLE, active matrix organic light emitting displays, Singlecrystal silicon thin film transistor

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Single Crystal Silicon Thin Film Transistor using SOI Wafer for the Switching Device of Top Emission Type AMOLEDs

J Korean Inst Electr Electron Mater Eng. 2003;16(4):292-297. Published online April 1, 2003

DOI: https://doi.org/10.4313/JKEM.2003.16.4.292

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Single Crystal Silicon Thin Film Transistor using SOI Wafer for the Switching Device of Top Emission Type AMOLEDs

J Korean Inst Electr Electron Mater Eng. 2003;16(4):292-297. Published online April 1, 2003

DOI: https://doi.org/10.4313/JKEM.2003.16.4.292

Articles

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SOI 웨이퍼를 이용한 Top emission 방식 AMOLEDs의 스위칭 소자용 단결정 실리콘 트랜지스터

Single Crystal Silicon Thin Film Transistor using SOI Wafer for the Switching Device of Top Emission Type AMOLEDs

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