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J Electr Electron Mater : Journal of Electrical and Electronic Materials

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평면구조 P-MOS DRAM 셀의 커패시터 V(T) 이온주입의 최적화

장성근, 김윤장

Optimization of Capacitor Threshold V(T) Implantation for Planar P-MOS DRAM Cell

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J Electr Electron Mater 2006;19(2):126-129.
Published online: February 1, 2006
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Optimization of Capacitor Threshold V(T) Implantation for Planar P-MOS DRAM Cell
J Electr Electron Mater. 2006;19(2):126-129.   Published online February 1, 2006
Download Citation

Download a citation file in RIS format that can be imported by all major citation management software, including EndNote, ProCite, RefWorks, and Reference Manager.

Format:
Include:
Optimization of Capacitor Threshold V(T) Implantation for Planar P-MOS DRAM Cell
J Electr Electron Mater. 2006;19(2):126-129.   Published online February 1, 2006
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