Skip to main navigation Skip to main content
  • KIEEME

J Electr Electron Mater : Journal of Electrical and Electronic Materials

OPEN ACCESS
ABOUT
BROWSE ARTICLES
EDITORIAL POLICIES
FOR CONTRIBUTORS

Articles

SiO2/P+ 컬렉터 구조를 가지는 1700 V급 고전압용 IGBT의 설계 및 해석에 관한 연구

이한신, 김요한, 강이구, 성만영

Design and Analysis of Insulator Gate Bipolor Transistor (IGBT) with SiO2/P+ Collector Structure Applicable to 1700 V High Voltage

, , ,
J Electr Electron Mater 2006;19(10):907-911.
Published online: October 1, 2006
  • 7 Views
  • 0 Download
  • 0 Crossref
  • 0 Scopus
prev next

Download Citation

Download a citation file in RIS format that can be imported by all major citation management software, including EndNote, ProCite, RefWorks, and Reference Manager.

Format:

Include:

Design and Analysis of Insulator Gate Bipolor Transistor (IGBT) with SiO2/P+ Collector Structure Applicable to 1700 V High Voltage
J Electr Electron Mater. 2006;19(10):907-911.   Published online October 1, 2006
Download Citation

Download a citation file in RIS format that can be imported by all major citation management software, including EndNote, ProCite, RefWorks, and Reference Manager.

Format:
Include:
Design and Analysis of Insulator Gate Bipolor Transistor (IGBT) with SiO2/P+ Collector Structure Applicable to 1700 V High Voltage
J Electr Electron Mater. 2006;19(10):907-911.   Published online October 1, 2006
Close