In this paper, TiO2 based thin-film transistors (TFTs) were fabricated using by an atomic layer deposition with high aspect ratio and excellent step coverage. Ti02 semiconducting layer was deposited showing a rutile phase through the rapid thermal annealing process, and exhibited TFT characteristics with a 200 pm channel length of low-leakage currents (none of current flow during off-state), stable threshold voltages (-10 V - 0 V), and a much higher on/off current ratio (
