In this paper, the oxide currents of thin silicon oxides is investigated. The oxide currents associated with the on time of applied voltage were used to measure the distribution of voltage stress induced traps in thin silicon oxide films. The stress induced leakage currents were due to the charging and discharging of traps generated by stress voltage in the silicon oxides. The stress induced leakage current will affect data retention in memory devices. The oxide current for the thickness dependence of stress current and stress induced leakage currents has been measured in oxides with thicknesses between 109 Å, 190 Å, 387 Å, and 818 Å which have the gate area 10-³ cm2. The oxide currents will affect data retention and the stress current, stress induced leakage current is used to estimate to fundamental limitations on oxide thicknesses.
