We report on thin-film transistors based on TiOx pre-annealed by femtosecond laser pulses. A 30-nm thick TiOx active channel layer was initially deposited by an ALD system. The TiOx semiconducting films were annealed by irradiation with a femtosecond laser (power: 3 W/cm2) for 5, 25, and 50s. Atomic force microscopy images revealed that the surface of a TiOx film without femtosecond laser pre-annealing was relatively rough, while after annealing with femtosecond laser pulses, the surface of the TiOx films became smooth. With increasing radiation time, the surrounding gas atmosphere could have a larger impact on the TiOx surface; meanwhile, the thin-film roughness decreased. Thin-film transistors with TiOx active channels pre-annealed at 50s exhibited good transfer characteristics and an on-to-off current ratio of ~103.
