A soft baking process was used to enhance the electrical characteristics of solution-processed indium-zincoxide (IZO) thin-film transistors (TFTs). We demonstrate a stable soft baking process using a hot plate in air to maintain the electrical stability and improve the electrical performance of IZO TFTs. These oxide transistors exhibited good electrical performance; a field-effect mobility of 7.9 cm2/Vs, threshold voltage of 1.4 V, sub-threshold slope of 0.5 V/dec, and a current on/off ratio of 2.9×107 were measured. To investigate the static response of our solutionprocessed IZO TFTs, simple resistor load type inverters were fabricated by connecting a resistor (5 or 10 MΩ). Our IZO TFTs, which were manufactured using the soft baking process at a baking temperature of 120℃, performed well at the operating voltage, and are therefore a good candidate for use in advanced logic circuits and transparent display backplanes.
