A 100 mm × 50 mm-sized (100) gallium oxide (Ga2O3) single crystal ingot was successfully grown by edge-defined film-fed growth (EFG). The preferred orientation and the quality of grown Ga2O3 ingot were compatible with a commercial Ga2O3 substrate by showing strong (100) orientation behaviors and 246 arcsec in X-ray rocking curve. Raman characterization was also performed for both samples; thereby providing various Raman-active characteristics of Ga2O3 crystals. In particular, we observed Ag(5) and Ag(10) peaks of Raman active mode, directly related to the impurity of the grown Ga2O3 crystal. Hence, the comparison of the crystal quality and Raman analysis might be useful for further enhancement of Ga2O3 single crystal quality in the future.
